onsemi Single Bipolar Transistors KSH122ITU

Description
Bipolar (BJT) Transistor NPN - Darlington 100V 8A 1.75W Through Hole I-PAK
  • Single Bipolar Transistors - KSH122ITU-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - KSH122ITU - 1051014-KSH122ITU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSH122ITU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN - Darlington 100V 8A 1.75W Through Hole I-PAK
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - KSH122ITU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSH122ITU-ND
Single Bipolar Transistors KSH122ITU-ND
Bipolar (BJT) Transistor NPN - Darlington 100V 8A 1.75W Through Hole I-PAK

Bipolar (BJT) Transistor NPN - Darlington 100V 8A 1.75W Through Hole I-PAK

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSH122ITU - 1051014-KSH122ITU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSH122ITU
1051014-KSH122ITU
TRANSISTORS - Transistors (BJT) - Single - KSH122ITU 1051014-KSH122ITU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1051014-KSH122ITU Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: I-Pak Maximum Current Collector: 8A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 4V @ 80mA, 8A Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 1000 @ 4A, 4V Maximum Power Dissipation: 1.75W Popularity: Medium Fake Threat In the Open Market: 40 pct. Supply and Demand Status: Balance Quantity per package: 5,040

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1051014-KSH122ITU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: I-Pak
Maximum Current Collector: 8A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 4V @ 80mA, 8A
Collector Cut-off Current(Max): 10μA
Typical Gain (hFE) (Min): 1000 @ 4A, 4V
Maximum Power Dissipation: 1.75W
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
Quantity per package: 5,040

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
Darlington Transistors
KSH122ITU
Darlington Transistors KSH122ITU
Darlington Transistors NPN Si Transistor Darlington

Darlington Transistors NPN Si Transistor Darlington

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSH122ITU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSH122ITU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSH122ITU
TRANS NPN DARL 100V 8A IPAK

TRANS NPN DARL 100V 8A IPAK

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Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Darlington Transistors Bipolar RF Transistors
Product Number KSH122ITU-ND 1051014-KSH122ITU KSH122ITU KSH122ITU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSH122ITU Darlington Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Darlington
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