onsemi Single Bipolar Transistors KSH112ITU

Description
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
  • Single Bipolar Transistors - KSH112ITU-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - KSH112ITU - 1051011-KSH112ITU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSH112ITU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - KSH112ITU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSH112ITU-ND
Single Bipolar Transistors KSH112ITU-ND
Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK

Bipolar (BJT) Transistor NPN - Darlington 100V 2A 25MHz 1.75W Through Hole I-PAK

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSH112ITU - 1051011-KSH112ITU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSH112ITU
1051011-KSH112ITU
TRANSISTORS - Transistors (BJT) - Single - KSH112ITU 1051011-KSH112ITU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1051011-KSH112ITU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 25MHz Transistor Polarity: NPN - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: I-Pak Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 3V @ 40mA, 4A Collector Cut-off Current(Max): 20μA Typical Gain (hFE) (Min): 1000 @ 2A, 3V Maximum Power Dissipation: 1.75W Popularity: Medium Fake Threat In the Open Market: 71 pct. Supply and Demand Status: Balance Quantity per package: 5,040

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1051011-KSH112ITU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 25MHz
Transistor Polarity: NPN - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: I-Pak
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 3V @ 40mA, 4A
Collector Cut-off Current(Max): 20μA
Typical Gain (hFE) (Min): 1000 @ 2A, 3V
Maximum Power Dissipation: 1.75W
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Balance
Quantity per package: 5,040

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSH112ITU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSH112ITU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSH112ITU
TRANS NPN DARL 100V 2A IPAK

TRANS NPN DARL 100V 2A IPAK

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number KSH112ITU-ND 1051011-KSH112ITU KSH112ITU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSH112ITU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN - Darlington
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