onsemi Single Bipolar Transistors KSE802STU

Description
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3
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Description
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3
Request a Quote Datasheet

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Single Bipolar Transistors - KSE802STU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSE802STU-ND
Single Bipolar Transistors KSE802STU-ND
Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN - Darlington 80V 4A 40W Through Hole TO-126-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSE802STU - 778069-KSE802STU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSE802STU
778069-KSE802STU
TRANSISTORS - Transistors (BJT) - Single - KSE802STU 778069-KSE802STU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 778069-KSE802STU Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-225AA, TO-126-3 Power - Max: 40W Transistor Type: NPN - Darlington Part Status: Obsolete(EOL) Family Name: KSE802 Categories: Discrete Semiconductor Products Manufacturer Package: TO-126-3 Current - Collector (Ic) (Maximum): 4A Voltage - Collector Emitter Breakdown (Maximum): 80V Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A Current - Collector Cutoff (Maximum): 100μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V Alternative Parts (Cross-Reference): MJE802; MJE803; 2SD2130; 2SD1693L; Introduction Date: June 08, 2001 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Balance Quantity per package: 1,920

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 778069-KSE802STU
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-225AA, TO-126-3
Power - Max: 40W
Transistor Type: NPN - Darlington
Part Status: Obsolete(EOL)
Family Name: KSE802
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-126-3
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Vce Saturation (Maximum) @ Ib, Ic: 2.5V @ 30mA, 1.5A
Current - Collector Cutoff (Maximum): 100μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 750 @ 1.5A, 3V
Alternative Parts (Cross-Reference): MJE802; MJE803; 2SD2130; 2SD1693L;
Introduction Date: June 08, 2001
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Balance
Quantity per package: 1,920

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSE802STU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSE802STU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSE802STU
TRANS NPN DARL 80V 4A TO126-3

TRANS NPN DARL 80V 4A TO126-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Darlington Transistors Bipolar RF Transistors
Product Number KSE802STU-ND 778069-KSE802STU KSE802STU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSE802STU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-225AA, TO-126-3 SOT3
IC(max) 0.1000 milliamps 4000 milliamps
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