onsemi TRANSISTORS - Transistors (BJT) - Single - KSE45H8TU KSE45H8TU

Description
PNP Epitaxial Silicon Transistor
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Description
PNP Epitaxial Silicon Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - KSE45H8TU - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSE45H8TU - 778067-KSE45H8TU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSE45H8TU
778067-KSE45H8TU
TRANSISTORS - Transistors (BJT) - Single - KSE45H8TU 778067-KSE45H8TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 778067-KSE45H8TU Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Power - Max: 1.67W Transistor Type: PNP Frequency - Transition: 40MHz Family Name: KSE45H8 Categories: Discrete Semiconductor Products Manufacturer Package: TO-220-3 Current - Collector (Ic) (Maximum): 10A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Maximum): 10μA DC Current Gain (hFE) (Minimum) @ Ic, Vce: 60 @ 2A, 1V Alternative Parts (Cross-Reference): 2N6107; BD708; D45H8; Introduction Date: June 07, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Not Compliant Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 778067-KSE45H8TU
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3
Power - Max: 1.67W
Transistor Type: PNP
Frequency - Transition: 40MHz
Family Name: KSE45H8
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 10A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Maximum): 10μA
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 60 @ 2A, 1V
Alternative Parts (Cross-Reference): 2N6107; BD708; D45H8;
Introduction Date: June 07, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Not Compliant
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single Bipolar Transistors - KSE45H8TU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSE45H8TU-ND
Single Bipolar Transistors KSE45H8TU-ND
Bipolar (BJT) Transistor PNP 60V 10A 40MHz 1.67W Through Hole TO-220-3

Bipolar (BJT) Transistor PNP 60V 10A 40MHz 1.67W Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSE45H8TU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSE45H8TU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSE45H8TU
TRANS PNP 60V 10A TO220-3

TRANS PNP 60V 10A TO220-3

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number KSE45H8TU 778067-KSE45H8TU KSE45H8TU-ND KSE45H8TU
Product Name TRANSISTORS - Transistors (BJT) - Single - KSE45H8TU Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3
Packing Method Tube; Tube Tube; Tube Tube; Tube
IC(max) 0.0100 milliamps 10000 milliamps
Power Gain 60 dB
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