onsemi Single Bipolar Transistors KSE45H11TU

Description
Bipolar (BJT) Transistor PNP 80V 10A 40MHz 1.67W Through Hole TO-220-3
  • Single Bipolar Transistors - KSE45H11TUFS-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - KSE45H11TU - 070533-KSE45H11TU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSE45H11TU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor PNP 80V 10A 40MHz 1.67W Through Hole TO-220-3
Request a Quote Datasheet

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Single Bipolar Transistors - KSE45H11TUFS-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSE45H11TUFS-ND
Single Bipolar Transistors KSE45H11TUFS-ND
Bipolar (BJT) Transistor PNP 80V 10A 40MHz 1.67W Through Hole TO-220-3

Bipolar (BJT) Transistor PNP 80V 10A 40MHz 1.67W Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSE45H11TU - 070533-KSE45H11TU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSE45H11TU
070533-KSE45H11TU
TRANSISTORS - Transistors (BJT) - Single - KSE45H11TU 070533-KSE45H11TU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 070533-KSE45H11TU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 40MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 10A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 1V @ 400mA, 8A Collector Cut-off Current(Max): 10μA Typical Gain (hFE) (Min): 60 @ 2A, 1V Maximum Power Dissipation: 1.67W Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070533-KSE45H11TU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 40MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 10A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1V @ 400mA, 8A
Collector Cut-off Current(Max): 10μA
Typical Gain (hFE) (Min): 60 @ 2A, 1V
Maximum Power Dissipation: 1.67W
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSE45H11TU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSE45H11TU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSE45H11TU
TRANS PNP 80V 10A TO220-3

TRANS PNP 80V 10A TO220-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number KSE45H11TUFS-ND 070533-KSE45H11TU KSE45H11TU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSE45H11TU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP
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