onsemi Single Bipolar Transistors KSE13003H3ASTU

Description
Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - KSE13003H3ASTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSE13003H3ASTU-ND
Single Bipolar Transistors KSE13003H3ASTU-ND
Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126-3

Buy Now Datasheet
Bipolar Transistor 276-KSE13003H3ASTU
NPN Silicon Transistor, TO-126 3L, 1920-RAIL Product overview: KSE13003H3ASTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSE13003H3ASTU can be used for catalog matching and distributor lookup.

NPN Silicon Transistor, TO-126 3L, 1920-RAIL Product overview: KSE13003H3ASTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSE13003H3ASTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSE13003H3ASTU - 070529-KSE13003H3ASTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSE13003H3ASTU
070529-KSE13003H3ASTU
TRANSISTORS - Transistors (BJT) - Single - KSE13003H3ASTU 070529-KSE13003H3ASTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 070529-KSE13003H3AST U Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 4MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126-3 Maximum Current Collector: 1.5A VCEO Maximum Collector-Emitter Breakdown Voltage: 400V Max Vce (sat): 3V @ 500mA, 1.5A Typical Gain (hFE) (Min): 19 @ 500mA, 2V Maximum Power Dissipation: 20W Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Quantity per package: 60

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070529-KSE13003H3ASTU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 4MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126-3
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 3V @ 500mA, 1.5A
Typical Gain (hFE) (Min): 19 @ 500mA, 2V
Maximum Power Dissipation: 20W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 60

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSE13003H3ASTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSE13003H3ASTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSE13003H3ASTU
TRANS NPN 400V 1.5A TO126-3

TRANS NPN 400V 1.5A TO126-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number KSE13003H3ASTU-ND 276-KSE13003H3ASTU 070529-KSE13003H3ASTU KSE13003H3ASTU
Product Name Single Bipolar Transistors Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - KSE13003H3ASTU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN
Package Type TO-225AA, TO-126-3 SOT3; TO-126-3
IC(max) 1500 milliamps 1500 milliamps
VCEO 400 volts 400 volts
VCBO 700 volts
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