onsemi TRANSISTORS - Transistors (BJT) - Single - KSE13003H3ASTU KSE13003H3ASTU

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070529-KSE13003H3ASTU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 4MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126-3
Maximum Current Collector: 1.5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 400V
Max Vce (sat): 3V @ 500mA, 1.5A
Typical Gain (hFE) (Min): 19 @ 500mA, 2V
Maximum Power Dissipation: 20W
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 60

NPN Silicon Transistor, TO-126 3L, 1920-RAIL Product overview: KSE13003H3ASTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSE13003H3ASTU can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN 400V 1.5A 4MHz 20W Through Hole TO-126-3