onsemi Single Bipolar Transistors KSD882YS

Description
Bipolar (BJT) Transistor NPN 30V 3A 90MHz 1W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 30V 3A 90MHz 1W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - KSD882YS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSD882YS-ND
Single Bipolar Transistors KSD882YS-ND
Bipolar (BJT) Transistor NPN 30V 3A 90MHz 1W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 30V 3A 90MHz 1W Through Hole TO-126-3

Buy Now Datasheet
Singapore
Bipolar Transistor
2087-KSD882YS
Bipolar Transistor 2087-KSD882YS
Bipolar Transistors - BJT NPN Epitaxial Sil Product overview: KSD882YS from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-KSD882YS can be used for catalog matching and distributor lookup.

Bipolar Transistors - BJT NPN Epitaxial Sil Product overview: KSD882YS from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-KSD882YS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSD882YS - 070527-KSD882YS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSD882YS
070527-KSD882YS
TRANSISTORS - Transistors (BJT) - Single - KSD882YS 070527-KSD882YS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 070527-KSD882YS Packaging: Bulk Mounting: Through Hole Frequency - Transition: 90MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-126-3 Maximum Current Collector: 3A VCEO Maximum Collector-Emitter Breakdown Voltage: 30V Max Vce (sat): 500mV @ 200mA, 2A Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 160 @ 1A, 2V Maximum Power Dissipation: 1W Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Limited Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070527-KSD882YS
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 90MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-126-3
Maximum Current Collector: 3A
VCEO Maximum Collector-Emitter Breakdown Voltage: 30V
Max Vce (sat): 500mV @ 200mA, 2A
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 160 @ 1A, 2V
Maximum Power Dissipation: 1W
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Limited
Quantity per package: 2k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSD882YS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSD882YS
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSD882YS
TRANS NPN 30V 3A TO126-3

TRANS NPN 30V 3A TO126-3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
KSD882YS
Bipolar Transistors - BJT KSD882YS
Bipolar Transistors - BJT NPN Epitaxial Sil

Bipolar Transistors - BJT NPN Epitaxial Sil

Buy Now Datasheet

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number KSD882YS-ND 2087-KSD882YS 070527-KSD882YS KSD882YS KSD882YS
Product Name Single Bipolar Transistors Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - KSD882YS Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN NPN; NPN
Package Type TO-225AA, TO-126-3 Bulk SOT3; TO-126-3
Packing Method Bulk Bulk; Bulk
IC(max) 3000 milliamps 3000 milliamps
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