onsemi Single Bipolar Transistors KSD882OS

Description
Bipolar (BJT) Transistor NPN 30V 3A 90MHz 1W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 30V 3A 90MHz 1W Through Hole TO-126-3
Request a Quote Datasheet

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Product
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Single Bipolar Transistors - KSD882OS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSD882OS-ND
Single Bipolar Transistors KSD882OS-ND
Bipolar (BJT) Transistor NPN 30V 3A 90MHz 1W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 30V 3A 90MHz 1W Through Hole TO-126-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSD882OS - 778063-KSD882OS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSD882OS
778063-KSD882OS
TRANSISTORS - Transistors (BJT) - Single - KSD882OS 778063-KSD882OS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 778063-KSD882OS Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-225AA, TO-126-3 Power - Max: 1W Transistor Type: NPN Frequency - Transition: 90MHz Part Status: Obsolete(EOL) Family Name: KSD882OS Categories: Discrete Semiconductor Products Manufacturer Package: TO-126-3 Current - Collector (Ic) (Maximum): 3A Voltage - Collector Emitter Breakdown (Maximum): 30V Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 200mA, 2A Current - Collector Cutoff (Maximum): 1μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 1A, 2V Alternative Parts (Cross-Reference): HT882; 2SD882-A; 2SD882; 2SD882-AZ; Introduction Date: November 14, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Limited Quantity per package: 250

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 778063-KSD882OS
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-225AA, TO-126-3
Power - Max: 1W
Transistor Type: NPN
Frequency - Transition: 90MHz
Part Status: Obsolete(EOL)
Family Name: KSD882OS
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-126-3
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 30V
Vce Saturation (Maximum) @ Ib, Ic: 500mV @ 200mA, 2A
Current - Collector Cutoff (Maximum): 1μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 1A, 2V
Alternative Parts (Cross-Reference): HT882; 2SD882-A; 2SD882; 2SD882-AZ;
Introduction Date: November 14, 2000
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Limited
Quantity per package: 250

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSD882OS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSD882OS
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSD882OS
TRANS NPN 30V 3A TO126-3

TRANS NPN 30V 3A TO126-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number KSD882OS-ND 778063-KSD882OS KSD882OS
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSD882OS Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-225AA, TO-126-3 SOT3
Packing Method Bulk; Bulk Bulk; Bulk
IC(max) 1.00E-3 milliamps 3000 milliamps
Power Gain 100 dB
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