onsemi TRANSISTORS - Transistors (BJT) - Single - KSD526YTU KSD526YTU

Description
NPN Epitaxial Silicon Transistor
Request a Quote Datasheet
Description
NPN Epitaxial Silicon Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - KSD526YTU - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Supplier's Site Datasheet
 - KSD526YTU - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSD526YTU - 002171-KSD526YTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSD526YTU
002171-KSD526YTU
TRANSISTORS - Transistors (BJT) - Single - KSD526YTU 002171-KSD526YTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 002171-KSD526YTU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 8MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 1.5V @ 300mA, 3A Collector Cut-off Current(Max): 30μA (ICBO) Typical Gain (hFE) (Min): 120 @ 500mA, 5V Maximum Power Dissipation: 30W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 002171-KSD526YTU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 8MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1.5V @ 300mA, 3A
Collector Cut-off Current(Max): 30μA (ICBO)
Typical Gain (hFE) (Min): 120 @ 500mA, 5V
Maximum Power Dissipation: 30W
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single Bipolar Transistors - KSD526YTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSD526YTU-ND
Single Bipolar Transistors KSD526YTU-ND
Bipolar (BJT) Transistor NPN 80V 4A 8MHz 30W Through Hole TO-220-3

Bipolar (BJT) Transistor NPN 80V 4A 8MHz 30W Through Hole TO-220-3

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
KSD526YTU
Bipolar Transistors - BJT KSD526YTU
Bipolar Transistors - BJT NPN Epitaxial Sil

Bipolar Transistors - BJT NPN Epitaxial Sil

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSD526YTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSD526YTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSD526YTU
TRANS NPN 80V 4A TO220-3

TRANS NPN 80V 4A TO220-3

Supplier's Site

Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number KSD526YTU 002171-KSD526YTU KSD526YTU-ND KSD526YTU KSD526YTU
Product Name TRANSISTORS - Transistors (BJT) - Single - KSD526YTU Single Bipolar Transistors Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN NPN
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