onsemi Single Bipolar Transistors KSD526YTU

Description
Bipolar (BJT) Transistor NPN 80V 4A 8MHz 30W Through Hole TO-220-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 80V 4A 8MHz 30W Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - KSD526YTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSD526YTU-ND
Single Bipolar Transistors KSD526YTU-ND
Bipolar (BJT) Transistor NPN 80V 4A 8MHz 30W Through Hole TO-220-3

Bipolar (BJT) Transistor NPN 80V 4A 8MHz 30W Through Hole TO-220-3

Buy Now Datasheet
 - KSD526YTU - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Supplier's Site Datasheet
 - KSD526YTU - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Supplier's Site Datasheet
Bipolar Transistor 2087-KSD526YTU
Bipolar Transistors - BJT NPN Epitaxial Sil Product overview: KSD526YTU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-KSD526YTU can be used for catalog matching and distributor lookup.

Bipolar Transistors - BJT NPN Epitaxial Sil Product overview: KSD526YTU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-KSD526YTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSD526YTU - 002171-KSD526YTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSD526YTU
002171-KSD526YTU
TRANSISTORS - Transistors (BJT) - Single - KSD526YTU 002171-KSD526YTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 002171-KSD526YTU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 8MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 80V Max Vce (sat): 1.5V @ 300mA, 3A Collector Cut-off Current(Max): 30μA (ICBO) Typical Gain (hFE) (Min): 120 @ 500mA, 5V Maximum Power Dissipation: 30W Popularity: Medium Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 002171-KSD526YTU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 8MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1.5V @ 300mA, 3A
Collector Cut-off Current(Max): 30μA (ICBO)
Typical Gain (hFE) (Min): 120 @ 500mA, 5V
Maximum Power Dissipation: 30W
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
KSD526YTU
Bipolar Transistors - BJT KSD526YTU
Bipolar Transistors - BJT NPN Epitaxial Sil

Bipolar Transistors - BJT NPN Epitaxial Sil

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSD526YTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSD526YTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSD526YTU
TRANS NPN 80V 4A TO220-3

TRANS NPN 80V 4A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics ERSAELECTRONICS PTE. LTD. Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number KSD526YTU-ND KSD526YTU 2087-KSD526YTU 002171-KSD526YTU KSD526YTU KSD526YTU
Product Name Single Bipolar Transistors Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - KSD526YTU Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN NPN; NPN
Package Type TO-220; TO-220-3 TO-220; TO-220-3 Tube TO-220; SOT3; TO-220-3
Packing Method Tube; Tube Tube Tube; Tube
IC(max) 4000 milliamps 4000 milliamps
Unlock Full Specs
to access all available technical data