NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
Bipolar (BJT) Transistor NPN 80V 4A 8MHz 30W Through Hole TO-220-3
Manufacturer: ON Semiconductor
Win Source Part Number: 1193630-KSD526Y
Packaging: Bulk
Mounting Style: Through Hole
Transistor Type: NPN
Frequency - Transition: 8MHz
Categories: Discrete Semiconductor Products
Supplier Device Package: TO-220-3
Temperature Range - Operating: 150°C
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-220-3
Current - Collector (Ic) (Maximum): 4A
Voltage - Collector Emitter Breakdown (Maximum): 80V
Current - Collector Cutoff (Maximum): 30μA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Family Part Number: KSD526
Manufacturer Pack Quantity: 1,200
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1.5V at 300mA, 3A
DC Current Gain (hFE) (Minimum) at Ic, Vce: 120 at 500mA, 5V
Maximum Power: 30W
Bipolar Transistors - BJT NPN Epitaxial Sil
TRANS NPN 80V 4A TO220-3
| Rochester Electronics | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | KSD526Y | KSD526Y-ND | 1193630-KSD526Y | KSD526Y | KSD526Y |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - KSD526Y | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | NPN | NPN | NPN | ||
| Package Type | TO-220; TO-220-3 | TO-220; TO-220-3 | TO-220; SOT3 | ||
| Packing Method | Bulk; Bulk | Bulk; Bulk | Bulk; Bulk | ||
| TJ | 150 C (302 F) | ||||
| Power Gain | 120 dB |
