onsemi TRANSISTORS - Transistors (BJT) - Single - KSD363RTU KSD363RTU

NPN Epitaxial Silicon Transistor

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1050979-KSD363RTU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 10MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 6A
VCEO Maximum Collector-Emitter Breakdown Voltage: 120V
Max Vce (sat): 1V @ 100mA, 1A
Collector Cut-off Current(Max): 1mA (ICBO)
Typical Gain (hFE) (Min): 40 @ 1A, 5V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Balance
Quantity per package: 1k pcs

Bipolar Transistors - BJT NPN Epitaxial Sil Product overview: KSD363RTU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-KSD363RTU can be used for catalog matching and distributor lookup.

Bipolar (BJT) Transistor NPN 120V 6A 10MHz 40W Through Hole TO-220-3