onsemi Single Bipolar Transistors KSD362RTU

Description
Bipolar (BJT) Transistor NPN 70V 5A 10MHz 40W Through Hole TO-220-3
  • Single Bipolar Transistors - KSD362RTU-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - KSD362RTU - 070522-KSD362RTU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSD362RTU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN 70V 5A 10MHz 40W Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - KSD362RTU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSD362RTU-ND
Single Bipolar Transistors KSD362RTU-ND
Bipolar (BJT) Transistor NPN 70V 5A 10MHz 40W Through Hole TO-220-3

Bipolar (BJT) Transistor NPN 70V 5A 10MHz 40W Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSD362RTU - 070522-KSD362RTU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSD362RTU
070522-KSD362RTU
TRANSISTORS - Transistors (BJT) - Single - KSD362RTU 070522-KSD362RTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 070522-KSD362RTU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 10MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 70V Max Vce (sat): 1V @ 500mA, 5A Collector Cut-off Current(Max): 20μA (ICBO) Typical Gain (hFE) (Min): 40 @ 5A, 5V Maximum Power Dissipation: 40W Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070522-KSD362RTU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 10MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 70V
Max Vce (sat): 1V @ 500mA, 5A
Collector Cut-off Current(Max): 20μA (ICBO)
Typical Gain (hFE) (Min): 40 @ 5A, 5V
Maximum Power Dissipation: 40W
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSD362RTU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSD362RTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSD362RTU
TRANS NPN 70V 5A TO220-3

TRANS NPN 70V 5A TO220-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number KSD362RTU-ND 070522-KSD362RTU KSD362RTU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSD362RTU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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