onsemi Single Bipolar Transistors KSD227GBU

Description
Bipolar (BJT) Transistor NPN 25V 300mA 400mW Through Hole TO-92-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 25V 300mA 400mW Through Hole TO-92-3
Request a Quote Datasheet

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Single Bipolar Transistors - KSD227GBU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSD227GBU-ND
Single Bipolar Transistors KSD227GBU-ND
Bipolar (BJT) Transistor NPN 25V 300mA 400mW Through Hole TO-92-3

Bipolar (BJT) Transistor NPN 25V 300mA 400mW Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSD227GBU - 778056-KSD227GBU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSD227GBU
778056-KSD227GBU
TRANSISTORS - Transistors (BJT) - Single - KSD227GBU 778056-KSD227GBU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 778056-KSD227GBU Packaging: Bulk Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-226-3, TO-92-3 (TO-226AA) Power - Max: 400mW Transistor Type: NPN Part Status: Obsolete(EOL) Family Name: KSD227G Categories: Discrete Semiconductor Products Manufacturer Package: TO-92-3 Current - Collector (Ic) (Maximum): 300mA Voltage - Collector Emitter Breakdown (Maximum): 25V Vce Saturation (Maximum) @ Ib, Ic: 400mV @ 30mA, 300mA Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 50mA, 1V Alternative Parts (Cross-Reference): 2N3393; 2N2924; 2N2925 Lead Free; 2N2925; Introduction Date: January 02, 2002 ECCN: EAR99 Country of Origin: China, Republic of Korea Estimated EOL Date: Obsolete / End of life Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 778056-KSD227GBU
Packaging: Bulk
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-226-3, TO-92-3 (TO-226AA)
Power - Max: 400mW
Transistor Type: NPN
Part Status: Obsolete(EOL)
Family Name: KSD227G
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-92-3
Current - Collector (Ic) (Maximum): 300mA
Voltage - Collector Emitter Breakdown (Maximum): 25V
Vce Saturation (Maximum) @ Ib, Ic: 400mV @ 30mA, 300mA
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 200 @ 50mA, 1V
Alternative Parts (Cross-Reference): 2N3393; 2N2924; 2N2925 Lead Free; 2N2925;
Introduction Date: January 02, 2002
ECCN: EAR99
Country of Origin: China, Republic of Korea
Estimated EOL Date: Obsolete / End of life
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSD227GBU - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSD227GBU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSD227GBU
TRANS NPN 25V 0.3A TO92-3

TRANS NPN 25V 0.3A TO92-3

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Technical Specifications

  DigiKey Win Source Electronics Acme Chip Technology Co., Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number KSD227GBU-ND 778056-KSD227GBU KSD227GBU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSD227GBU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-92; TO-226-3, TO-92-3 (TO-226AA) TO-92; SOT3
Packing Method Bulk; Bulk Bulk; Bulk
IC(max) 1.00E-4 milliamps 300 milliamps
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