onsemi TRANSISTORS - Transistors (BJT) - Single - KSD2012YYDTU KSD2012YYDTU

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 778055-KSD2012YYDTU Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack, Formed Leads Power - Max: 25W Transistor Type: NPN Frequency - Transition: 3MHz Part Status: Obsolete(EOL) Family Name: KSD2012Y Categories: Discrete Semiconductor Products Manufacturer Package: TO-220F-3 (Y-Forming) Current - Collector (Ic) (Maximum): 3A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Maximum): 100μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 500mA, 5V Alternative Parts (Cross-Reference): 2SD2012; 2SD2012,MURATAF(J; 2SD2012(HIHO,F); 2SD2012(KENW,F); Introduction Date: November 14, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Quantity per package: 50
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 778055-KSD2012YYDTU Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack, Formed Leads Power - Max: 25W Transistor Type: NPN Frequency - Transition: 3MHz Part Status: Obsolete(EOL) Family Name: KSD2012Y Categories: Discrete Semiconductor Products Manufacturer Package: TO-220F-3 (Y-Forming) Current - Collector (Ic) (Maximum): 3A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Maximum): 100μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 500mA, 5V Alternative Parts (Cross-Reference): 2SD2012; 2SD2012,MURATAF(J; 2SD2012(HIHO,F); 2SD2012(KENW,F); Introduction Date: November 14, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Quantity per package: 50
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Suppliers

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Product
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TRANSISTORS - Transistors (BJT) - Single - KSD2012YYDTU - 778055-KSD2012YYDTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSD2012YYDTU
778055-KSD2012YYDTU
TRANSISTORS - Transistors (BJT) - Single - KSD2012YYDTU 778055-KSD2012YYDTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 778055-KSD2012YYDTU Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack, Formed Leads Power - Max: 25W Transistor Type: NPN Frequency - Transition: 3MHz Part Status: Obsolete(EOL) Family Name: KSD2012Y Categories: Discrete Semiconductor Products Manufacturer Package: TO-220F-3 (Y-Forming) Current - Collector (Ic) (Maximum): 3A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Maximum): 100μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 500mA, 5V Alternative Parts (Cross-Reference): 2SD2012; 2SD2012,MURATAF(J; 2SD2012(HIHO,F); 2SD2012(KENW,F); Introduction Date: November 14, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 778055-KSD2012YYDTU
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3 Full Pack, Formed Leads
Power - Max: 25W
Transistor Type: NPN
Frequency - Transition: 3MHz
Part Status: Obsolete(EOL)
Family Name: KSD2012Y
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-220F-3 (Y-Forming)
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Maximum): 100μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 500mA, 5V
Alternative Parts (Cross-Reference): 2SD2012; 2SD2012,MURATAF(J; 2SD2012(HIHO,F); 2SD2012(KENW,F);
Introduction Date: November 14, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single Bipolar Transistors - KSD2012YYDTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSD2012YYDTU-ND
Single Bipolar Transistors KSD2012YYDTU-ND
Bipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Through Hole TO-220F-3 (Y-Forming)

Bipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Through Hole TO-220F-3 (Y-Forming)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSD2012YYDTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSD2012YYDTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSD2012YYDTU
TRANS NPN 60V 3A TO220F-3

TRANS NPN 60V 3A TO220F-3

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number 778055-KSD2012YYDTU KSD2012YYDTU-ND KSD2012YYDTU
Product Name TRANSISTORS - Transistors (BJT) - Single - KSD2012YYDTU Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
Package Type TO-220; SOT3 TO-220; TO-220-3 Full Pack, Formed Leads
Packing Method Tube; Tube Tube; Tube
IC(max) 0.1000 milliamps 3000 milliamps
Power Gain 100 dB
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