onsemi TRANSISTORS - Transistors (BJT) - Single - KSD2012GTU KSD2012GTU

Description
NPN Epitaxial Silicon Transistor
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Description
NPN Epitaxial Silicon Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - KSD2012GTU - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSD2012GTU - 1193622-KSD2012GTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSD2012GTU
1193622-KSD2012GTU
TRANSISTORS - Transistors (BJT) - Single - KSD2012GTU 1193622-KSD2012GTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1193622-KSD2012GTU Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: 150°C (TJ) Package: TO-220-3 Full Pack Power - Max: 25W Transistor Type: NPN Frequency - Transition: 3MHz Family Name: KSD2012G Categories: Discrete Semiconductor Products Manufacturer Homepage: www.fairchildsemi.co m Manufacturer Package: TO-220F Current - Collector (Ic) (Maximum): 3A Voltage - Collector Emitter Breakdown (Maximum): 60V Vce Saturation (Maximum) @ Ib, Ic: 1V @ 200mA, 2A Current - Collector Cutoff (Maximum): 100μA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 150 @ 500mA, 5V Alternative Parts (Cross-Reference): 2SD2353(Q); 2SD2353,Q(J; 2SD2353; Introduction Date: November 14, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2023 Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1193622-KSD2012GTU
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3 Full Pack
Power - Max: 25W
Transistor Type: NPN
Frequency - Transition: 3MHz
Family Name: KSD2012G
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.fairchildsemi.com
Manufacturer Package: TO-220F
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Maximum): 100μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 150 @ 500mA, 5V
Alternative Parts (Cross-Reference): 2SD2353(Q); 2SD2353,Q(J; 2SD2353;
Introduction Date: November 14, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Single Bipolar Transistors - KSD2012GTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSD2012GTU-ND
Single Bipolar Transistors KSD2012GTU-ND
Bipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Through Hole TO-220F-3

Bipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Through Hole TO-220F-3

Buy Now Datasheet
Bipolar Transistors - 8062762 - RS Components, Ltd.
Corby, Northants, United Kingdom
Bipolar Transistors
8062762
Bipolar Transistors 8062762
Transistor, Fairchild, KSD2012GTU

Transistor, Fairchild, KSD2012GTU

Supplier's Site
Single Bipolar Transistors - KSD2012GTU - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
KSD2012GTU
Single Bipolar Transistors KSD2012GTU
TRANS NPN 60V 3A TO220F-3

TRANS NPN 60V 3A TO220F-3

Supplier's Site Datasheet
Singapore
60V 3A 3MHz TO-220 Bipolar Transistor
276-KSD2012GTU
60V 3A 3MHz TO-220 Bipolar Transistor 276-KSD2012GTU
NPN BJT 60V 3A TO-220 3MHz hFE 100 Product overview: KSD2012GTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A, 3MHz, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, 3MHz, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSD2012GTU can be used for catalog matching and distributor lookup.

NPN BJT 60V 3A TO-220 3MHz hFE 100 Product overview: KSD2012GTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A, 3MHz, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, 3MHz, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSD2012GTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSD2012GTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSD2012GTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSD2012GTU
TRANS NPN 60V 3A TO220F-3

TRANS NPN 60V 3A TO220F-3

Supplier's Site
TRANS NPN 60V 3A TO-220F - 598-KSD2012GTU - Utmel Electronic Limited
Hong Kong, China
TRANS NPN 60V 3A TO-220F
598-KSD2012GTU
TRANS NPN 60V 3A TO-220F 598-KSD2012GTU
TRANS NPN 60V 3A TO-220F

TRANS NPN 60V 3A TO-220F

Supplier's Site
Transistor, Npn, 60V, 3A, To-220F-3; Transistor Polarity Onsemi - 46AC0935 - Newark, An Avnet Company
Chicago, IL, United States
Transistor, Npn, 60V, 3A, To-220F-3; Transistor Polarity Onsemi
46AC0935
Transistor, Npn, 60V, 3A, To-220F-3; Transistor Polarity Onsemi 46AC0935
TRANSISTOR, NPN, 60V, 3A, TO-220F-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:3MHz; Power Dissipation Pd:25W; DC Collector Current:3A; DC Current Gain hFE:150hFE; Transistor Case RoHS Compliant: Yes

TRANSISTOR, NPN, 60V, 3A, TO-220F-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:3MHz; Power Dissipation Pd:25W; DC Collector Current:3A; DC Current Gain hFE:150hFE; Transistor Case RoHS Compliant: Yes

Supplier's Site Datasheet
Transistor - 49266545 - Radwell International
Willingboro, NJ, United States
Transistor
49266545
Transistor 49266545
TRANSISTOR, NPN, 60V, 3A, TO-220F-3, TRANSISTOR POLARITY:NPN, COLLECTOR EMITTER VOLTAGE V(BR)CEO:60V, TRANSITION FREQUENCY FT:3MHZ, POWER DISSIPATION PD:25W, DC COLLECTOR CURRENT:3A, DC CURRENT GAIN HFE:150HFE, TRANSISTOR CASE ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

TRANSISTOR, NPN, 60V, 3A, TO-220F-3, TRANSISTOR POLARITY:NPN, COLLECTOR EMITTER VOLTAGE V(BR)CEO:60V, TRANSITION FREQUENCY FT:3MHZ, POWER DISSIPATION PD:25W, DC COLLECTOR CURRENT:3A, DC CURRENT GAIN HFE:150HFE, TRANSISTOR CASE ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
KSD2012GTU
Bipolar Transistors - BJT KSD2012GTU
Bipolar Transistors - BJT NPN Si Transistor Epitaxial

Bipolar Transistors - BJT NPN Si Transistor Epitaxial

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Technical Specifications

  Rochester Electronics Win Source Electronics DigiKey RS Components, Ltd. ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited Newark, An Avnet Company Radwell International VAST STOCK CO., LIMITED
Product Category RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Transistors Transistors RF Transistors Bipolar RF Transistors
Product Number KSD2012GTU 1193622-KSD2012GTU KSD2012GTU-ND 8062762 KSD2012GTU 276-KSD2012GTU KSD2012GTU 598-KSD2012GTU 46AC0935 49266545 KSD2012GTU
Product Name TRANSISTORS - Transistors (BJT) - Single - KSD2012GTU Single Bipolar Transistors Bipolar Transistors Single Bipolar Transistors 60V 3A 3MHz TO-220 Bipolar Transistor Discrete Semiconductor Products - Transistors - Bipolar (BJT) TRANS NPN 60V 3A TO-220F Transistor, Npn, 60V, 3A, To-220F-3; Transistor Polarity Onsemi Transistor Bipolar Transistors - BJT
Polarity NPN NPN NPN NPN NPN; NPN NPN NPN; NPN NPN
Package Type TO-220; TO-220-3 FullPak TO-220; SOT3 TO-220; TO-220-3 Full Pack TO-220; To-220f TO-220; TO-220-3 Full Pack TO-3; TO-220
Packing Method Tube; Tube Tube; Tube
Number of units in IC 1
IC(max) 3000 milliamps 3000 milliamps 3000 milliamps
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