NPN BJT 60V 3A TO-220 3MHz hFE 100 Product overview: KSD2012GTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 3A, 3MHz, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 3A, 3MHz, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSD2012GTU can be used for catalog matching and distributor lookup.
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1193622-KSD2012GTU
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: 150°C (TJ)
Package: TO-220-3 Full Pack
Power - Max: 25W
Transistor Type: NPN
Frequency - Transition: 3MHz
Family Name: KSD2012G
Categories: Discrete Semiconductor Products
Manufacturer Homepage: www.fairchildsemi.co
Manufacturer Package: TO-220F
Current - Collector (Ic) (Maximum): 3A
Voltage - Collector Emitter Breakdown (Maximum): 60V
Vce Saturation (Maximum) @ Ib, Ic: 1V @ 200mA, 2A
Current - Collector Cutoff (Maximum): 100μA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 150 @ 500mA, 5V
Alternative Parts (Cross-Reference): 2SD2353(Q); 2SD2353,Q(J; 2SD2353;
Introduction Date: November 14, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2023
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
Transistor, Fairchild, KSD2012GTU
Bipolar (BJT) Transistor NPN 60V 3A 3MHz 25W Through Hole TO-220F-3
NPN Epitaxial Silicon Transistor
TRANS NPN 60V 3A TO220F-3
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
TRANSISTOR, NPN, 60V, 3A, TO-220F-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:3MHz; Power Dissipation Pd:25W; DC Collector Current:3A; DC Current Gain hFE:150hFE; Transistor Case RoHS Compliant: Yes
TRANSISTOR, NPN, 60V, 3A, TO-220F-3, TRANSISTOR POLARITY:NPN, COLLECTOR EMITTER VOLTAGE V(BR)CEO:60V, TRANSITION FREQUENCY FT:3MHZ, POWER DISSIPATION PD:25W, DC COLLECTOR CURRENT:3A, DC CURRENT GAIN HFE:150HFE, TRANSISTOR CASE ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY
TRANS NPN 60V 3A TO-220F
TRANS NPN 60V 3A TO220F-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | RS Components, Ltd. | DigiKey | Rochester Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Radwell International | Utmel Electronic Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | 276-KSD2012GTU | 1193622-KSD2012GTU | 8062762 | KSD2012GTU-ND | KSD2012GTU | KSD2012GTU | KSD2012GTU | 46AC0935 | 49266545 | 598-KSD2012GTU | KSD2012GTU |
| Product Name | 60V 3A 3MHz TO-220 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single - KSD2012GTU | Bipolar Transistors | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT | Transistor, Npn, 60V, 3A, To-220F-3; Transistor Polarity Onsemi | Transistor | TRANS NPN 60V 3A TO-220F | Single Bipolar Transistors | |
| Polarity | NPN | NPN | NPN | NPN | NPN | NPN | NPN; NPN | NPN; NPN | |||
| IC(max) | 3000 milliamps | 3000 milliamps | 3000 milliamps | ||||||||
| VCEO | 60 volts | 60 volts | 60 volts | ||||||||
| VCBO | 60 volts | ||||||||||
| fT | 3 MHz |
