NPN Epitaxial Silicon Transistor
Bipolar (BJT) Transistor NPN 60V 5A 1.3W Through Hole TO-126-3
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1050972-KSD1691GS
Packaging: Bulk
Mounting: Through Hole
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126-3
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 300mV @ 200mA, 2A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 200 @ 2A, 1V
Maximum Power Dissipation: 1.3W
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs
TRANS NPN 60V 5A TO126-3
Bipolar Transistors - BJT NPN Epitaxial Sil
| Rochester Electronics | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | KSD1691GS | KSD1691GSFS-ND | 1050972-KSD1691GS | KSD1691GS | KSD1691GS |
| Product Name | Single Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - KSD1691GS | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT | |
| Polarity | NPN | NPN | NPN; NPN |
