Bipolar (BJT) Transistor NPN 60V 1A 160MHz 750mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 60V 1A 160MHz 750mW Through Hole TO-92-3
Transistor, Fairchild, KSD1616AYTA
Transistor, Fairchild, KSD1616AYTA
Transistor, Fairchild, KSD1616AYTA
Win Source Part Number: 1089972-KSD1616AYTA
Category: Discrete Semiconductor Products>Transistors
Package: Cut Tape (CT),Tape & Box (TB)
Standard Package: 2,000
Power - Max: 750 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 1 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 300mV @ 50mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 135 @ 100mA, 2V
Frequency - Transition: 160MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): KSD1616AGTA; KSD1616ALTA; KSD1616GTA;
ECCN: EAR99
Fake Threat In the Open Market: 54 pct.
MSL Level: Not Applicable
REACH Status: REACH Unaffected
HTSUS: 8541.21.0075
Mfr: onsemi
Other Names: KSD1616AYTATB,KSD161
Base Product Number: KSD1616
Bipolar Transistors - BJT NPN Epitaxial Transistor Product overview: KSD1616AYTA from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-KSD1616AYTA can be used for catalog matching and distributor lookup.
Bipolar Transistors - BJT NPN Epitaxial Transistor
TRANSISTOR, NPN, 60V, 1A, TO-92-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:60V; Transition Frequency ft:160MHz; Power Dissipation Pd:750mW; DC Collector Current:1A; DC Current Gain hFE:135hFE; Transistor Case RoHS Compliant: Yes
TRANS NPN 60V 1A TO92-3
| DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors |
| Product Number | KSD1616AYTACT-ND | 8064532 | 8064532P | 1089972-KSD1616AYTA | 2087-KSD1616AYTA | 598-KSD1616AYTA | 46AC0934 | KSD1616AYTA |
| Product Name | Single Bipolar Transistors | Bipolar Transistors | Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) - Single | Bipolar Transistor | Bipolar Transistors - BJT NPN Epitaxial Transistor | Transistor, Npn, 60V, 1A, To-92-3; Transistor Polarity Onsemi | Discrete Semiconductor Products - Transistors - Bipolar (BJT) |
| Polarity | NPN | NPN | NPN | NPN | NPN; NPN | NPN | ||
| Package Type | TO-92; TO-226-3, TO-92-3 (TO-226AA) Formed Leads | TO-92; To-92 | TO-92; TO-92 | TO-92; SOT3 | Ammo Pack | TO-3; TO-92 | ||
| Number of units in IC | 1 | 1 | ||||||
| IC(max) | 1000 milliamps | 1000 milliamps | 1000 milliamps | 1000 milliamps | ||||
| Power Gain | 135 dB |
