NPN BJT Transistor, 60V, 1A, 160MHz, TO-92, Through Hole Product overview: KSD1616AGTA from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Through-Hole, 60V, 1A, 160MHz. Search-friendly keywords include transistor, BJT, switching, amplification, Through-Hole, 60V, 1A, 160MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSD1616AGTA can be used for catalog matching and distributor lookup.
NPN Epitaxial Silicon Transistor
Bipolar (BJT) Transistor NPN 60V 1A 160MHz 750mW Through Hole TO-92-3
Bipolar (BJT) Transistor NPN 60V 1A 160MHz 750mW Through Hole TO-92-3
Transistor GP BJT NPN 60V 1A TO92 3 Pin
Transistor GP BJT NPN 60V 1A TO92 3 Pin
Transistor GP BJT NPN 60V 1A TO92 3 Pin
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070517-KSD1616AGTA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 160MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 300mV @ 50mA, 1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 100mA, 2V
Maximum Power Dissipation: 750mW
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs
Bipolar Transistors - BJT NPN Epitaxial Transistor
TRANS NPN 60V 1A TO92-3
| ERSAELECTRONICS PTE. LTD. | Rochester Electronics | DigiKey | RS Components, Ltd. | RS Components, Ltd. | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 276-KSD1616AGTA | KSD1616AGTA | KSD1616AGTATB-ND | 7390404P | 7390404 | 070517-KSD1616AGTA | KSD1616AGTA | KSD1616AGTA |
| Product Name | Through-Hole 60V 1A 160MHz Bipolar Transistor | Single Bipolar Transistors | Bipolar Transistors | Bipolar Transistors | TRANSISTORS - Transistors (BJT) - Single - KSD1616AGTA | Bipolar Transistors - BJT | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | NPN | NPN | NPN | NPN | NPN | NPN; NPN | ||
| IC(max) | 1000 milliamps | 1000 milliamps | ||||||
| VCEO | 60 volts | 60 volts | ||||||
| VCBO | 120 volts | |||||||
| fT | 160 MHz |
