Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070516-KSD1616AGBU
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 160MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 300mV @ 50mA, 1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 200 @ 100mA, 2V
Maximum Power Dissipation: 750mW
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited
Quantity per package: 10k pcs
Bipolar (BJT) Transistor NPN 60V 1A 160MHz 750mW Through Hole TO-92-3
NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
Bipolar Transistors - BJT NPN Epitaxial Sil Product overview: KSD1616AGBU from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, Bipolar (BJT). This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2087-KSD1616AGBU can be used for catalog matching and distributor lookup.
TRANS NPN 60V 1A TO92-3
Bipolar Transistors - BJT NPN Epitaxial Sil
TRANSISTOR, BIPOL, NPN, 60V, TO-226AA-3; Transistor Polarity:NPN; Collector Emitter Voltage Max:60V; Continuous Collector Current:1A; Power Dissipation:750mW; Transistor Mounting:Through Hole; No. of Pins:3Pins; Qualification:- RoHS Compliant: Yes
TRANSISTOR,BJT,NPN,6
TRANS NPN 60V 1A TO92-3
| Win Source Electronics | DigiKey | Rochester Electronics | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 070516-KSD1616AGBU | KSD1616AGBU-ND | KSD1616AGBU | 2087-KSD1616AGBU | KSD1616AGBU | KSD1616AGBU | 31Y2173 | 82C7615 | KSD1616AGBU |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - KSD1616AGBU | Single Bipolar Transistors | Bipolar Transistor | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - BJT | Transistor, Bipol, Npn, 60V, To-226Aa-3; Transistor Polarity Onsemi | Transistor,bjt,npn,60V V(Br)Ceo,1A I(C),to-92 Rohs Compliant Onsemi | Single Bipolar Transistors | |
| Polarity | NPN; NPN | NPN | NPN | NPN | NPN | NPN | NPN; NPN | ||
| Package Type | TO-92; SOT3; TO-92-3 | TO-92; TO-226-3, TO-92-3 (TO-226AA) | TO-92; TO-92-3 | Bulk | TO-3 | TO-3; TO-92 | TO-92; TO-226-3, TO-92-3 (TO-226AA) | ||
| Packing Method | Bulk; Bulk | Bulk | Bulk; Bulk | ||||||
| IC(max) | 1000 milliamps | 1000 milliamps | 1000 milliamps | ||||||
| fT | 160 MHz |
