NPN Epitaxial Silicon Transistor
NPN Epitaxial Silicon Transistor
Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070514-KSD1408YTU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 8MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220F
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 80V
Max Vce (sat): 1.5V @ 300mA, 3A
Collector Cut-off Current(Max): 30μA (ICBO)
Typical Gain (hFE) (Min): 120 @ 500mA, 5V
Maximum Power Dissipation: 25W
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs
NPN BJT Transistor, 80V, 4A, 25W, TO-220 Product overview: KSD1408YTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 80V, 4A, 25W, TO-220. Search-friendly keywords include transistor, BJT, switching, amplification, 80V, 4A, 25W, TO-220, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSD1408YTU can be used for catalog matching and distributor lookup.
Bipolar (BJT) Transistor NPN 80V 4A 8MHz 25W Through Hole TO-220F-3
Bipolar Transistors - BJT NPN Epitaxial Sil
TRANSISTOR, NPN, 80V, 4A, TO-220F-3; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:80V; Transition Frequency ft:8MHz; Power Dissipation Pd:25W; DC Collector Current:4A; DC Current Gain hFE:120hFE; Transistor Case RoHS Compliant: Yes
TRANS NPN 80V 4A TO220F-3
TRANS NPN 80V 4A TO220F-3
| Rochester Electronics | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | KSD1408YTU | 070514-KSD1408YTU | 276-KSD1408YTU | KSD1408YTU-ND | KSD1408YTU | 46AC0933 | KSD1408YTU | KSD1408YTU |
| Product Name | TRANSISTORS - Transistors (BJT) - Single - KSD1408YTU | 80V 4A 25W TO-220 Bipolar Transistor | Single Bipolar Transistors | Bipolar Transistors - BJT | Transistor, Npn, 80V, 4A, To-220F-3; Transistor Polarity Onsemi | Single Bipolar Transistors | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | |
| Polarity | NPN | NPN; NPN | NPN | NPN | NPN | NPN; NPN | ||
| Package Type | TO-220; TO-220-3 FullPak | TO-220; SOT3; TO-220F | TO-220; TO-220-3 Full Pack | TO-3; TO-220 | TO-220; TO-220-3 Full Pack | |||
| Packing Method | Tube; Tube | Tube; Tube | ||||||
| IC(max) | 4000 milliamps | 4000 milliamps | 4000 milliamps | |||||
| VCEO | 80 volts | 80 volts | 80 volts |
