NPN epitaxial silicon transistor for FM radio RF amplification, mixing, conversion, oscillation, and IF amplification, housed in a TO-92 package with dimensions of 4.58 mm height, 2.29 mm base diameter, and 1.27 mm lead spacing. It has a collector-emitter voltage rating of 30 V, collector current of 30 mA, and power dissipation of 250 mW. The device features a typical current gain bandwidth product of 250 MHz and DC current gain (hFE) classified in the Y range of 120 to 240 at VCE=12 V and IC=2 mA. Junction temperature ranges from -55 °C to 150 °C.
Small Signal Bipolar Transistor, 0.03A, 30V, NPN, TO-92
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | KSC838YBU |
| Polarity | NPN |
