onsemi Single Bipolar Transistors KSC5504DTM

Description
Bipolar (BJT) Transistor NPN 600V 4A 11MHz 75W Surface Mount TO-252AA
  • Single Bipolar Transistors - KSC5504DTM-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - KSC5504DTM - 070505-KSC5504DTM - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSC5504DTM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN 600V 4A 11MHz 75W Surface Mount TO-252AA
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single Bipolar Transistors - KSC5504DTM-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSC5504DTM-ND
Single Bipolar Transistors KSC5504DTM-ND
Bipolar (BJT) Transistor NPN 600V 4A 11MHz 75W Surface Mount TO-252AA

Bipolar (BJT) Transistor NPN 600V 4A 11MHz 75W Surface Mount TO-252AA

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSC5504DTM - 070505-KSC5504DTM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSC5504DTM
070505-KSC5504DTM
TRANSISTORS - Transistors (BJT) - Single - KSC5504DTM 070505-KSC5504DTM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 070505-KSC5504DTM Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 11MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-252AA Maximum Current Collector: 4A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Max Vce (sat): 1.5V @ 400mA, 2A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 4 @ 2A, 1V Maximum Power Dissipation: 75W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070505-KSC5504DTM
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 11MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-252AA
Maximum Current Collector: 4A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Max Vce (sat): 1.5V @ 400mA, 2A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 4 @ 2A, 1V
Maximum Power Dissipation: 75W
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSC5504DTM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSC5504DTM
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSC5504DTM
TRANS NPN 600V 4A TO252AA

TRANS NPN 600V 4A TO252AA

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number KSC5504DTM-ND 070505-KSC5504DTM KSC5504DTM
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSC5504DTM Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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