onsemi Single Bipolar Transistors KSC5502DTTU

Description
Bipolar (BJT) Transistor NPN 600V 2A 11MHz 50W Through Hole TO-220-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 600V 2A 11MHz 50W Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - KSC5502DTTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSC5502DTTU-ND
Single Bipolar Transistors KSC5502DTTU-ND
Bipolar (BJT) Transistor NPN 600V 2A 11MHz 50W Through Hole TO-220-3

Bipolar (BJT) Transistor NPN 600V 2A 11MHz 50W Through Hole TO-220-3

Buy Now Datasheet
 - KSC5502DTTU - Rochester Electronics
Newburyport, MA, United States
NPN Triple Diffused Planar Silicon Transistor

NPN Triple Diffused Planar Silicon Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSC5502DTTU - 070504-KSC5502DTTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSC5502DTTU
070504-KSC5502DTTU
TRANSISTORS - Transistors (BJT) - Single - KSC5502DTTU 070504-KSC5502DTTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 070504-KSC5502DTTU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 11MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 600V Max Vce (sat): 1.5V @ 200mA, 1A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 4 @ 1A, 1V Maximum Power Dissipation: 50W Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070504-KSC5502DTTU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 11MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 600V
Max Vce (sat): 1.5V @ 200mA, 1A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 4 @ 1A, 1V
Maximum Power Dissipation: 50W
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSC5502DTTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSC5502DTTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSC5502DTTU
TRANS NPN 600V 2A TO220-3

TRANS NPN 600V 2A TO220-3

Supplier's Site
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
KSC5502DTTU
Bipolar Transistors - BJT KSC5502DTTU
Bipolar Transistors - BJT NPN Trip Dif Planar Silicon Transistor

Bipolar Transistors - BJT NPN Trip Dif Planar Silicon Transistor

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Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number KSC5502DTTU-ND KSC5502DTTU 070504-KSC5502DTTU KSC5502DTTU KSC5502DTTU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSC5502DTTU Discrete Semiconductor Products - Transistors - Bipolar (BJT) Bipolar Transistors - BJT
Polarity NPN NPN NPN; NPN
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