onsemi Single Bipolar Transistors KSC5402DTTU

Description
Bipolar (BJT) Transistor NPN 450V 2A 11MHz 50W Through Hole TO-220-3
  • Single Bipolar Transistors - KSC5402DTTU-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - KSC5402DTTU - 070503-KSC5402DTTU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSC5402DTTU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor NPN 450V 2A 11MHz 50W Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single Bipolar Transistors - KSC5402DTTU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSC5402DTTU-ND
Single Bipolar Transistors KSC5402DTTU-ND
Bipolar (BJT) Transistor NPN 450V 2A 11MHz 50W Through Hole TO-220-3

Bipolar (BJT) Transistor NPN 450V 2A 11MHz 50W Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSC5402DTTU - 070503-KSC5402DTTU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSC5402DTTU
070503-KSC5402DTTU
TRANSISTORS - Transistors (BJT) - Single - KSC5402DTTU 070503-KSC5402DTTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 070503-KSC5402DTTU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 11MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 2A VCEO Maximum Collector-Emitter Breakdown Voltage: 450V Max Vce (sat): 750mV @ 200mA, 1A Collector Cut-off Current(Max): 100μA Typical Gain (hFE) (Min): 6 @ 1A, 1V Maximum Power Dissipation: 50W Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited Quantity per package: 1k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070503-KSC5402DTTU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 11MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 2A
VCEO Maximum Collector-Emitter Breakdown Voltage: 450V
Max Vce (sat): 750mV @ 200mA, 1A
Collector Cut-off Current(Max): 100μA
Typical Gain (hFE) (Min): 6 @ 1A, 1V
Maximum Power Dissipation: 50W
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited
Quantity per package: 1k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSC5402DTTU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSC5402DTTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSC5402DTTU
TRANS NPN 450V 2A TO220-3

TRANS NPN 450V 2A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number KSC5402DTTU-ND 070503-KSC5402DTTU KSC5402DTTU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSC5402DTTU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; NPN
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