onsemi Single Bipolar Transistors KSC3552OTU

Bipolar (BJT) Transistor NPN 800V 12A 15MHz 150W Through Hole TO-3P

Win Source Part Number: 1022164-KSC3552OTU
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - Single
Package: Tube
Standard Package: 450
Power - Max: 150 W
Voltage - Collector Emitter Breakdown (Max): 800 V
Current - Collector (Ic) (Max): 12 A
Transistor Type: NPN
Vce Saturation (Max) @ Ib, Ic: 2V @ 1.2A, 6A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 800mA, 5V
Frequency - Transition: 15MHz
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-3P
Temperature Range - Operating: 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 84 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: onsemi
Base Product Number: KSC3552
Product Status: Obsolete

NPN BJT 800V 12A 150W TO-3P Transistor Product overview: KSC3552OTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 800V, 12A, 150W. Search-friendly keywords include transistor, BJT, switching, amplification, 800V, 12A, 150W, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSC3552OTU can be used for catalog matching and distributor lookup.