onsemi Single Bipolar Transistors KSC3502ESTU

Description
Bipolar (BJT) Transistor NPN 200V 100mA 150MHz 1.2W Through Hole TO-126-3
  • Single Bipolar Transistors - KSC3502ESTU-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - KSC3502ESTU - 810398-KSC3502ESTU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSC3502ESTU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 200V 100mA 150MHz 1.2W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - KSC3502ESTU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSC3502ESTU-ND
Single Bipolar Transistors KSC3502ESTU-ND
Bipolar (BJT) Transistor NPN 200V 100mA 150MHz 1.2W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 200V 100mA 150MHz 1.2W Through Hole TO-126-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSC3502ESTU - 810398-KSC3502ESTU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSC3502ESTU
810398-KSC3502ESTU
TRANSISTORS - Transistors (BJT) - Single - KSC3502ESTU 810398-KSC3502ESTU
Manufacturer: ON Semiconductor Win Source Part Number: 810398-KSC3502ESTU Packaging: Tube Mounting Style: Through Hole Power - Max: 1.2W Transistor Type: NPN Frequency - Transition: 150MHz Part Status: Obsolete (End Of Life) Supplier Device Package: TO-126-3 Temperature Range - Operating: 150°C Manufacturer Package: TO-225AA, TO-126-3 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 200V Current - Collector Cutoff (Maximum): 100nA (ICBO) Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 60 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 600mV at 2mA, 20mA DC Current Gain (hFE) (Min) at Ic, Vce: 100 at 10mA, 10V

Manufacturer: ON Semiconductor
Win Source Part Number: 810398-KSC3502ESTU
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 1.2W
Transistor Type: NPN
Frequency - Transition: 150MHz
Part Status: Obsolete (End Of Life)
Supplier Device Package: TO-126-3
Temperature Range - Operating: 150°C
Manufacturer Package: TO-225AA, TO-126-3
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 200V
Current - Collector Cutoff (Maximum): 100nA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 60
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 600mV at 2mA, 20mA
DC Current Gain (hFE) (Min) at Ic, Vce: 100 at 10mA, 10V

Buy Now
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSC3502ESTU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSC3502ESTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSC3502ESTU
TRANS NPN 200V 0.1A TO126-3

TRANS NPN 200V 0.1A TO126-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number KSC3502ESTU-ND 810398-KSC3502ESTU KSC3502ESTU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSC3502ESTU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN
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