onsemi Single Bipolar Transistors KSC3502ES

Description
Bipolar (BJT) Transistor NPN 200V 100mA 150MHz 1.2W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 200V 100mA 150MHz 1.2W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - KSC3502ES-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSC3502ES-ND
Single Bipolar Transistors KSC3502ES-ND
Bipolar (BJT) Transistor NPN 200V 100mA 150MHz 1.2W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 200V 100mA 150MHz 1.2W Through Hole TO-126-3

Buy Now Datasheet
Singapore
200V 0.1A Bipolar Transistor
276-KSC3502ES
200V 0.1A Bipolar Transistor 276-KSC3502ES
TRANS NPN 200V 0.1A TO-126 Product overview: KSC3502ES from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 200V, 0.1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSC3502ES can be used for catalog matching and distributor lookup.

TRANS NPN 200V 0.1A TO-126 Product overview: KSC3502ES from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 0.1A. Search-friendly keywords include transistor, BJT, switching, amplification, 200V, 0.1A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSC3502ES can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSC3502ES - 127953-KSC3502ES - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSC3502ES
127953-KSC3502ES
TRANSISTORS - Transistors (BJT) - Single - KSC3502ES 127953-KSC3502ES
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 127953-KSC3502ES Packaging: Bulk Mounting: Through Hole Frequency - Transition: 150MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 200V Max Vce (sat): 600mV @ 2mA, 20mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 10mA, 10V Maximum Power Dissipation: 1.2W Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 127953-KSC3502ES
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 150MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 200V
Max Vce (sat): 600mV @ 2mA, 20mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 10mA, 10V
Maximum Power Dissipation: 1.2W
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSC3502ES - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSC3502ES
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSC3502ES
TRANS NPN 200V 0.1A TO126-3

TRANS NPN 200V 0.1A TO126-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number KSC3502ES-ND 276-KSC3502ES 127953-KSC3502ES KSC3502ES
Product Name Single Bipolar Transistors 200V 0.1A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - KSC3502ES Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN
Package Type TO-225AA, TO-126-3 SOT3; TO-126-3
IC(max) 100 milliamps 100 milliamps
VCEO 200 volts 200 volts
VCBO 200 volts
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