onsemi Single Bipolar Transistors KSC3296YTU

Description
NPN Epitaxial Silicon Transistor
Request a Quote Datasheet
Description
NPN Epitaxial Silicon Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - KSC3296YTU - Rochester Electronics
Newburyport, MA, United States
NPN Epitaxial Silicon Transistor

NPN Epitaxial Silicon Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - KSC3296YTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSC3296YTU-ND
Single Bipolar Transistors KSC3296YTU-ND
Bipolar (BJT) Transistor NPN 150V 1.5A 4MHz 20W Through Hole TO-220F-3

Bipolar (BJT) Transistor NPN 150V 1.5A 4MHz 20W Through Hole TO-220F-3

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TRANSISTORS - Transistors (BJT) - Single - KSC3296YTU - 808969-KSC3296YTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSC3296YTU
808969-KSC3296YTU
TRANSISTORS - Transistors (BJT) - Single - KSC3296YTU 808969-KSC3296YTU
Manufacturer: ON Semiconductor Win Source Part Number: 808969-KSC3296YTU Packaging: Tube Mounting Style: Through Hole Power - Max: 20W Transistor Type: NPN Frequency - Transition: 4MHz Supplier Device Package: TO-220F Temperature Range - Operating: 150°C Manufacturer Package: TO-220-3 Full Pack Current - Collector (Ic) (Maximum): 1.5A Voltage - Collector Emitter Breakdown (Maximum): 150V Current - Collector Cutoff (Maximum): 10μA (ICBO) Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Limited Manufacturer Pack Quantity: 1,000 MSL Level: 1 (Unlimited) Vce Saturation (Maximum) at Ib, Ic: 1.5V at 50mA, 500mA DC Current Gain (hFE) (Min) at Ic, Vce: 40 at 500mA, 10V

Manufacturer: ON Semiconductor
Win Source Part Number: 808969-KSC3296YTU
Packaging: Tube
Mounting Style: Through Hole
Power - Max: 20W
Transistor Type: NPN
Frequency - Transition: 4MHz
Supplier Device Package: TO-220F
Temperature Range - Operating: 150°C
Manufacturer Package: TO-220-3 Full Pack
Current - Collector (Ic) (Maximum): 1.5A
Voltage - Collector Emitter Breakdown (Maximum): 150V
Current - Collector Cutoff (Maximum): 10μA (ICBO)
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1,000
MSL Level: 1 (Unlimited)
Vce Saturation (Maximum) at Ib, Ic: 1.5V at 50mA, 500mA
DC Current Gain (hFE) (Min) at Ic, Vce: 40 at 500mA, 10V

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
KSC3296YTU
Bipolar Transistors - BJT KSC3296YTU
Bipolar Transistors - BJT NPN Epitaxial Sil

Bipolar Transistors - BJT NPN Epitaxial Sil

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSC3296YTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSC3296YTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSC3296YTU
TRANS NPN 150V 1.5A TO220F-3

TRANS NPN 150V 1.5A TO220F-3

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number KSC3296YTU KSC3296YTU-ND 808969-KSC3296YTU KSC3296YTU KSC3296YTU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSC3296YTU Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN
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