onsemi Bipolar RF Transistors KSC3123RMTF

Description
RF Transistor NPN 20V 50mA 1.4GHz 150mW Surface Mount SOT-23-3
Request a Quote Datasheet
Description
RF Transistor NPN 20V 50mA 1.4GHz 150mW Surface Mount SOT-23-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar RF Transistors - KSC3123RMTF-ND - DigiKey
Thief River Falls, MN, United States
Bipolar RF Transistors
KSC3123RMTF-ND
Bipolar RF Transistors KSC3123RMTF-ND
RF Transistor NPN 20V 50mA 1.4GHz 150mW Surface Mount SOT-23-3

RF Transistor NPN 20V 50mA 1.4GHz 150mW Surface Mount SOT-23-3

Buy Now Datasheet
 - KSC3123RMTF - Rochester Electronics
Newburyport, MA, United States
RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

Supplier's Site Datasheet
TRANSISTORS - RF Transistors (BJT) - KSC3123RMTF - 070496-KSC3123RMTF - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - KSC3123RMTF
070496-KSC3123RMTF
TRANSISTORS - RF Transistors (BJT) - KSC3123RMTF 070496-KSC3123RMTF
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 070496-KSC3123RMTF Packaging: Reel - TR Mounting: SMD (SMT) Gain: 20dB to 23dB Frequency - Transition: 1.4GHz Transistor Polarity: NPN Noise Figure (dB Typ @ f): 3.8dB to 5.5dB @ 200MHz Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: SOT-23-3 (TO-236) Maximum Current Collector: 50mA VCEO Maximum Collector-Emitter Breakdown Voltage: 20V Typical Gain (hFE) (Min): 60 @ 5mA, 10V Maximum Power Dissipation: 150mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070496-KSC3123RMTF
Packaging: Reel - TR
Mounting: SMD (SMT)
Gain: 20dB to 23dB
Frequency - Transition: 1.4GHz
Transistor Polarity: NPN
Noise Figure (dB Typ @ f): 3.8dB to 5.5dB @ 200MHz
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: SOT-23-3 (TO-236)
Maximum Current Collector: 50mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 20V
Typical Gain (hFE) (Min): 60 @ 5mA, 10V
Maximum Power Dissipation: 150mW
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Bipolar RF Transistors - KSC3123RMTF - ODG (Origin Data Global)
Shenzhen, China
Bipolar RF Transistors
KSC3123RMTF
Bipolar RF Transistors KSC3123RMTF
RF TRANS NPN 20V 1.4GHZ SOT23-3

RF TRANS NPN 20V 1.4GHZ SOT23-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSC3123RMTF - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSC3123RMTF
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSC3123RMTF
RF TRANS NPN 20V 1.4GHZ SOT23-3

RF TRANS NPN 20V 1.4GHZ SOT23-3

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number KSC3123RMTF-ND KSC3123RMTF 070496-KSC3123RMTF KSC3123RMTF KSC3123RMTF
Product Name Bipolar RF Transistors TRANSISTORS - RF Transistors (BJT) - KSC3123RMTF Bipolar RF Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN NPN; NPN
Package Type SOT23; TO-236-3, SC-59, SOT-23-3 SOP8 SOT3; SOT23; SOT-23-3 (TO-236) SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR)
TJ 150 C (302 F) 150 C (302 F)
Power Gain 60 dB 20 dB
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