onsemi TRANSISTORS - Transistors (BJT) - Single - KSC2682YS KSC2682YS

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 100452-KSC2682YS
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 200MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 180V
Max Vce (sat): 500mV @ 5mA, 50mA
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 160 @ 10mA, 5V
Maximum Power Dissipation: 1.2W
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient

Bipolar (BJT) Transistor NPN 180V 100mA 200MHz 1.2W Through Hole TO-126-3

NPN BJT 180V 100mA 200MHz TO-126 Transistor Product overview: KSC2682YS from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 180V, 100mA, 200MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 180V, 100mA, 200MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSC2682YS can be used for catalog matching and distributor lookup.