onsemi Single Bipolar Transistors KSC2682YS

Description
Bipolar (BJT) Transistor NPN 180V 100mA 200MHz 1.2W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor NPN 180V 100mA 200MHz 1.2W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - KSC2682YS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSC2682YS-ND
Single Bipolar Transistors KSC2682YS-ND
Bipolar (BJT) Transistor NPN 180V 100mA 200MHz 1.2W Through Hole TO-126-3

Bipolar (BJT) Transistor NPN 180V 100mA 200MHz 1.2W Through Hole TO-126-3

Buy Now Datasheet
Singapore
180V 100mA 200MHz Bipolar Transistor
276-KSC2682YS
180V 100mA 200MHz Bipolar Transistor 276-KSC2682YS
NPN BJT 180V 100mA 200MHz TO-126 Transistor Product overview: KSC2682YS from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 180V, 100mA, 200MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 180V, 100mA, 200MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSC2682YS can be used for catalog matching and distributor lookup.

NPN BJT 180V 100mA 200MHz TO-126 Transistor Product overview: KSC2682YS from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 180V, 100mA, 200MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 180V, 100mA, 200MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSC2682YS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSC2682YS - 100452-KSC2682YS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSC2682YS
100452-KSC2682YS
TRANSISTORS - Transistors (BJT) - Single - KSC2682YS 100452-KSC2682YS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 100452-KSC2682YS Packaging: Bulk Mounting: Through Hole Frequency - Transition: 200MHz Transistor Polarity: NPN Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 180V Max Vce (sat): 500mV @ 5mA, 50mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 160 @ 10mA, 5V Maximum Power Dissipation: 1.2W Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 100452-KSC2682YS
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 200MHz
Transistor Polarity: NPN
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 180V
Max Vce (sat): 500mV @ 5mA, 50mA
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 160 @ 10mA, 5V
Maximum Power Dissipation: 1.2W
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSC2682YS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSC2682YS
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSC2682YS
TRANS NPN 180V 0.1A TO126-3

TRANS NPN 180V 0.1A TO126-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number KSC2682YS-ND 276-KSC2682YS 100452-KSC2682YS KSC2682YS
Product Name Single Bipolar Transistors 180V 100mA 200MHz Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - KSC2682YS Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN NPN; NPN
Package Type TO-225AA, TO-126-3 SOT3; TO-126-3
IC(max) 100 milliamps 100 milliamps
VCEO 180 volts 180 volts
VCBO 180 volts
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