onsemi KSC1187YBU

Description
RF Small Signal Bipolar Transistor, 0.03A, Very High Frequency Band, NPN, TO-92
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Description
RF Small Signal Bipolar Transistor, 0.03A, Very High Frequency Band, NPN, TO-92
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NPN epitaxial silicon transistor for TV first and second picture IF amplifier applications with forward AGC, packaged in TO-92, with a collector current rating of 30 mA, collector-emitter voltage of 20 V, current gain bandwidth product of 700 MHz, power dissipation of 250 mW, and junction temperature rating of 150 °C.

Datasheet Summary
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NPN epitaxial silicon transistor for TV first and second picture IF amplifier applications with forward AGC, packaged in TO-92, with a collector current rating of 30 mA, collector-emitter voltage of 20 V, current gain bandwidth product of 700 MHz, power dissipation of 250 mW, and junction temperature rating of 150 °C.

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 - KSC1187YBU - Rochester Electronics
Newburyport, MA, United States
RF Small Signal Bipolar Transistor, 0.03A, Very High Frequency Band, NPN, TO-92

RF Small Signal Bipolar Transistor, 0.03A, Very High Frequency Band, NPN, TO-92

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Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number KSC1187YBU
Polarity NPN
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