onsemi Single Bipolar Transistors KSB601YTU

Description
Bipolar (BJT) Transistor PNP - Darlington 100V 5A 1.5W Through Hole TO-220-3
  • Single Bipolar Transistors - KSB601YTU-ND - DigiKey
    DigiKey
  • TRANSISTORS - Transistors (BJT) - Single - KSB601YTU - 070475-KSB601YTU - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSB601YTU - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Bipolar (BJT) Transistor PNP - Darlington 100V 5A 1.5W Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Single Bipolar Transistors - KSB601YTU-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSB601YTU-ND
Single Bipolar Transistors KSB601YTU-ND
Bipolar (BJT) Transistor PNP - Darlington 100V 5A 1.5W Through Hole TO-220-3

Bipolar (BJT) Transistor PNP - Darlington 100V 5A 1.5W Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSB601YTU - 070475-KSB601YTU - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSB601YTU
070475-KSB601YTU
TRANSISTORS - Transistors (BJT) - Single - KSB601YTU 070475-KSB601YTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 070475-KSB601YTU Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: PNP - Darlington Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-220-3 Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 100V Max Vce (sat): 1.5V @ 3mA, 3A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 5000 @ 3A, 2V Maximum Power Dissipation: 1.5W Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070475-KSB601YTU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: PNP - Darlington
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-220-3
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 100V
Max Vce (sat): 1.5V @ 3mA, 3A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 5000 @ 3A, 2V
Maximum Power Dissipation: 1.5W
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSB601YTU - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSB601YTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSB601YTU
TRANS PNP DARL 100V 5A TO220-3

TRANS PNP DARL 100V 5A TO220-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Bipolar RF Transistors
Product Number KSB601YTU-ND 070475-KSB601YTU KSB601YTU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSB601YTU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP - Darlington
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