onsemi KSB564AOBU

PNP epitaxial silicon transistor for audio frequency power amplification, designed as a complement to the KSD471A. Housed in a TO-92 package with dimensions of 4.58 mm body length and 2.29 mm lead spacing. Features a collector current rating of -1.0 A and collector power dissipation of 800 mW. Collector-emitter voltage is rated at -25 V, collector-base voltage at -30 V, and emitter-base voltage at -5 V. Junction temperature ranges from -55 °C to 150 °C. DC current gain (hFE) ranges from 70 to 400, grouped into O, Y, and G classifications. Collector-emitter saturation voltage is -0.5 V at -1 A collector current and -0.1 A base current. Current gain bandwidth product is 110 MHz. The suffix "-C" indicates center collector pinout (Emitter-Collector-Base). Part is in full production with bulk packaging.