onsemi Single Bipolar Transistors KSB1151YSTU

Description
Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - KSB1151YSTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSB1151YSTU-ND
Single Bipolar Transistors KSB1151YSTU-ND
Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126-3

Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126-3

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 - KSB1151YSTU - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
 - KSB1151YSTU - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSB1151YSTU - 070469-KSB1151YSTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSB1151YSTU
070469-KSB1151YSTU
TRANSISTORS - Transistors (BJT) - Single - KSB1151YSTU 070469-KSB1151YSTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 070469-KSB1151YSTU Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126-3 Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 300mV @ 200mA, 2A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 160 @ 2A, 1V Maximum Power Dissipation: 1.3W Popularity: Medium Fake Threat In the Open Market: 36 pct. Supply and Demand Status: Limited Quantity per package: 1,920

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 070469-KSB1151YSTU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126-3
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 300mV @ 200mA, 2A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 160 @ 2A, 1V
Maximum Power Dissipation: 1.3W
Popularity: Medium
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Limited
Quantity per package: 1,920

Buy Now Datasheet
Singapore, Singapore
-60V 5A Bipolar Transistor
276-KSB1151YSTU
-60V 5A Bipolar Transistor 276-KSB1151YSTU
PNP BJT Transistor, -60V VCEO, 5A IC, TO-126 Product overview: KSB1151YSTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -60V, 5A. Search-friendly keywords include transistor, BJT, switching, amplification, -60V, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSB1151YSTU can be used for catalog matching and distributor lookup.

PNP BJT Transistor, -60V VCEO, 5A IC, TO-126 Product overview: KSB1151YSTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -60V, 5A. Search-friendly keywords include transistor, BJT, switching, amplification, -60V, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSB1151YSTU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
KSB1151YSTU
Bipolar Transistors - BJT KSB1151YSTU
Bipolar Transistors - BJT PNP Epitaxial Sil

Bipolar Transistors - BJT PNP Epitaxial Sil

Buy Now Datasheet
Single Bipolar Transistors - KSB1151YSTU - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
KSB1151YSTU
Single Bipolar Transistors KSB1151YSTU
TRANS PNP 60V 5A TO126-3

TRANS PNP 60V 5A TO126-3

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSB1151YSTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSB1151YSTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSB1151YSTU
TRANS PNP 60V 5A TO126-3

TRANS PNP 60V 5A TO126-3

Supplier's Site

Technical Specifications

  DigiKey Rochester Electronics Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number KSB1151YSTU-ND KSB1151YSTU 070469-KSB1151YSTU 276-KSB1151YSTU KSB1151YSTU KSB1151YSTU KSB1151YSTU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSB1151YSTU -60V 5A Bipolar Transistor Bipolar Transistors - BJT Single Bipolar Transistors Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; PNP PNP PNP; PNP
Package Type TO-225AA, TO-126-3 TO-126-3 SOT3; TO-126-3 TO-225AA, TO-126-3
Packing Method Tube; Tube Tube; Tube
IC(max) 5000 milliamps 5000 milliamps 5000 milliamps
VCEO 60 volts 60 volts 60 volts
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