onsemi TRANSISTORS - Transistors (BJT) - Single - KSB1151YSTSSTU KSB1151YSTSSTU

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1050891-KSB1151YSTSSTU
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126-3
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 300mV @ 200mA, 2A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 160 @ 2A, 1V
Maximum Power Dissipation: 1.3W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Quantity per package: 60

Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126-3

TRANS PNP 60V 5A TO-126 Product overview: KSB1151YSTSSTU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 5A. Search-friendly keywords include transistor, BJT, switching, amplification, 60V, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSB1151YSTSSTU can be used for catalog matching and distributor lookup.