onsemi Single Bipolar Transistors KSB1151YS

Description
Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - KSB1151YSFS-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSB1151YSFS-ND
Single Bipolar Transistors KSB1151YSFS-ND
Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126-3

Bipolar (BJT) Transistor PNP 60V 5A 1.3W Through Hole TO-126-3

Buy Now Datasheet
Singapore
5A Bipolar Transistor
276-KSB1151YS
5A Bipolar Transistor 276-KSB1151YS
POWER BIPOLAR TRANSISTOR, 5A, 60 Product overview: KSB1151YS from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5A. Search-friendly keywords include transistor, BJT, switching, amplification, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSB1151YS can be used for catalog matching and distributor lookup.

POWER BIPOLAR TRANSISTOR, 5A, 60 Product overview: KSB1151YS from Fairchild (onsemi) is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 5A. Search-friendly keywords include transistor, BJT, switching, amplification, 5A, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSB1151YS can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
 - KSB1151YS - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
 - KSB1151YS - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSB1151YS - 010618-KSB1151YS - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSB1151YS
010618-KSB1151YS
TRANSISTORS - Transistors (BJT) - Single - KSB1151YS 010618-KSB1151YS
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 010618-KSB1151YS Packaging: Tube/Rail Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-126-3 Maximum Current Collector: 5A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 300mV @ 200mA, 2A Collector Cut-off Current(Max): 10μA (ICBO) Typical Gain (hFE) (Min): 160 @ 2A, 1V Maximum Power Dissipation: 1.3W Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 010618-KSB1151YS
Packaging: Tube/Rail
Mounting: Through Hole
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-126-3
Maximum Current Collector: 5A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 300mV @ 200mA, 2A
Collector Cut-off Current(Max): 10μA (ICBO)
Typical Gain (hFE) (Min): 160 @ 2A, 1V
Maximum Power Dissipation: 1.3W
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSB1151YS - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSB1151YS
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSB1151YS
TRANS PNP 60V 5A TO126-3

TRANS PNP 60V 5A TO126-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Rochester Electronics Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors RF Transistors Transistors Bipolar RF Transistors
Product Number KSB1151YSFS-ND 276-KSB1151YS KSB1151YS 010618-KSB1151YS KSB1151YS
Product Name Single Bipolar Transistors 5A Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - KSB1151YS Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP PNP; PNP
Package Type TO-225AA, TO-126-3 Bulk TO-126-3 SOT3; TO-126-3
Packing Method Bulk Bulk; Bulk Bulk; Bulk
IC(max) 5000 milliamps 5000 milliamps
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