onsemi TRANSISTORS - Transistors (BJT) - Single - KSB1116AYTA KSB1116AYTA

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1050887-KSB1116AYTA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 120MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 300mV @ 50mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 135 @ 100mA, 2V Maximum Power Dissipation: 750mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1050887-KSB1116AYTA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 120MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 300mV @ 50mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 135 @ 100mA, 2V Maximum Power Dissipation: 750mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs
Request a Quote Datasheet

Suppliers

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Description
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TRANSISTORS - Transistors (BJT) - Single - KSB1116AYTA - 1050887-KSB1116AYTA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSB1116AYTA
1050887-KSB1116AYTA
TRANSISTORS - Transistors (BJT) - Single - KSB1116AYTA 1050887-KSB1116AYTA
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1050887-KSB1116AYTA Packaging: AMMO PACKAGE Mounting: Through Hole Frequency - Transition: 120MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 60V Max Vce (sat): 300mV @ 50mA, 1A Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 135 @ 100mA, 2V Maximum Power Dissipation: 750mW Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1050887-KSB1116AYTA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Frequency - Transition: 120MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 60V
Max Vce (sat): 300mV @ 50mA, 1A
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 135 @ 100mA, 2V
Maximum Power Dissipation: 750mW
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSB1116AYTA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSB1116AYTA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSB1116AYTA
TRANS PNP 60V 1A TO92-3

TRANS PNP 60V 1A TO92-3

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors
Product Number 1050887-KSB1116AYTA KSB1116AYTA
Product Name TRANSISTORS - Transistors (BJT) - Single - KSB1116AYTA Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP
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