PNP epitaxial silicon transistor for low frequency power amplification, rated for a collector current of -300 mA DC and a collector power dissipation of 400 mW, with a collector-emitter voltage rating of -25 V and a collector-base voltage rating of -30 V. Mounted in a TO-92 package with dimensions of 4.58 mm tall and 2.29 mm base diameter. Features a DC current gain (hFE) classification of 200 to 400 for the 'G' suffix variant. Meets the RoHS standard. The 'GBU' suffix indicates bulk packaging of the 'G' gain class variant.
Small Signal Bipolar Transistor, 0.3A, 25V, PNP, TO-92
| Rochester Electronics | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | KSA642GBU |
| Polarity | PNP |
