onsemi Single Bipolar Transistors KSA539CYTA

Description
PNP Epitaxial Silicon Transistor
Request a Quote Datasheet
Description
PNP Epitaxial Silicon Transistor
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
 - KSA539CYTA - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
 - KSA539CYTA - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
Single Bipolar Transistors - KSA539CYTATB-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSA539CYTATB-ND
Single Bipolar Transistors KSA539CYTATB-ND
Bipolar (BJT) Transistor PNP 45V 200mA 400mW Through Hole TO-92-3

Bipolar (BJT) Transistor PNP 45V 200mA 400mW Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSA539CYTA - 1050864-KSA539CYTA - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSA539CYTA
1050864-KSA539CYTA
TRANSISTORS - Transistors (BJT) - Single - KSA539CYTA 1050864-KSA539CYTA
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1050864-KSA539CYTA Packaging: AMMO PACKAGE Mounting: Through Hole Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 200mA VCEO Maximum Collector-Emitter Breakdown Voltage: 45V Max Vce (sat): 500mV @ 15mA, 150mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 120 @ 50mA, 1V Maximum Power Dissipation: 400mW Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Balance Quantity per package: 2k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1050864-KSA539CYTA
Packaging: AMMO PACKAGE
Mounting: Through Hole
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 45V
Max Vce (sat): 500mV @ 15mA, 150mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 120 @ 50mA, 1V
Maximum Power Dissipation: 400mW
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Balance
Quantity per package: 2k pcs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSA539CYTA - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSA539CYTA
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSA539CYTA
TRANS PNP 45V 0.2A TO92-3

TRANS PNP 45V 0.2A TO92-3

Supplier's Site

Technical Specifications

  Rochester Electronics DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Transistors Transistors Bipolar RF Transistors
Product Number KSA539CYTA KSA539CYTATB-ND 1050864-KSA539CYTA KSA539CYTA
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSA539CYTA Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; PNP
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