onsemi Single Bipolar Transistors KSA1381ESTU

Description
TRANS PNP 300V 0.1A TO126-3
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Description
TRANS PNP 300V 0.1A TO126-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - KSA1381ESTU - ODG (Origin Data Global)
Shenzhen, China
Single Bipolar Transistors
KSA1381ESTU
Single Bipolar Transistors KSA1381ESTU
TRANS PNP 300V 0.1A TO126-3

TRANS PNP 300V 0.1A TO126-3

Supplier's Site Datasheet
Single Bipolar Transistors - KSA1381ESTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSA1381ESTU-ND
Single Bipolar Transistors KSA1381ESTU-ND
Bipolar (BJT) Transistor PNP 300V 100mA 150MHz 7W Through Hole TO-126-3

Bipolar (BJT) Transistor PNP 300V 100mA 150MHz 7W Through Hole TO-126-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSA1381ESTU - 138094-KSA1381ESTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSA1381ESTU
138094-KSA1381ESTU
TRANSISTORS - Transistors (BJT) - Single - KSA1381ESTU 138094-KSA1381ESTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 138094-KSA1381ESTU Packaging: Tube/Rail Mounting: Through Hole Frequency - Transition: 150MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-126-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 300V Max Vce (sat): 600mV @ 2mA, 20mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 100 @ 10mA, 10V Maximum Power Dissipation: 7W Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited Quantity per package: 1,920

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 138094-KSA1381ESTU
Packaging: Tube/Rail
Mounting: Through Hole
Frequency - Transition: 150MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-126-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 300V
Max Vce (sat): 600mV @ 2mA, 20mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 100 @ 10mA, 10V
Maximum Power Dissipation: 7W
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited
Quantity per package: 1,920

Buy Now Datasheet
Sheung Wan, Hong Kong
Bipolar Transistors - BJT
KSA1381ESTU
Bipolar Transistors - BJT KSA1381ESTU
Bipolar Transistors - BJT PNP Si Transistor Epitaxial

Bipolar Transistors - BJT PNP Si Transistor Epitaxial

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSA1381ESTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSA1381ESTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSA1381ESTU
TRANS PNP 300V 0.1A TO126-3

TRANS PNP 300V 0.1A TO126-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number KSA1381ESTU KSA1381ESTU-ND 138094-KSA1381ESTU KSA1381ESTU KSA1381ESTU
Product Name Single Bipolar Transistors Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSA1381ESTU Bipolar Transistors - BJT Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP; PNP PNP PNP; PNP
Package Type TO-225AA, TO-126-3 TO-225AA, TO-126-3 SOT3; TO-126-3
IC(max) 100 milliamps 100 milliamps
VCEO 300 volts 300 volts
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