onsemi Single Bipolar Transistors KSA1381ESTSSTU

Description
Bipolar (BJT) Transistor PNP 300V 100mA 150MHz 7W Through Hole TO-126-3
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Description
Bipolar (BJT) Transistor PNP 300V 100mA 150MHz 7W Through Hole TO-126-3
Request a Quote Datasheet

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Single Bipolar Transistors - KSA1381ESTSSTU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSA1381ESTSSTU-ND
Single Bipolar Transistors KSA1381ESTSSTU-ND
Bipolar (BJT) Transistor PNP 300V 100mA 150MHz 7W Through Hole TO-126-3

Bipolar (BJT) Transistor PNP 300V 100mA 150MHz 7W Through Hole TO-126-3

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TRANSISTORS - Transistors (BJT) - Single - KSA1381ESTSSTU - 778031-KSA1381ESTSSTU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSA1381ESTSSTU
778031-KSA1381ESTSSTU
TRANSISTORS - Transistors (BJT) - Single - KSA1381ESTSSTU 778031-KSA1381ESTSSTU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 778031-KSA1381ESTSST U Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-225AA, TO-126-3 Power - Max: 7W Transistor Type: PNP Frequency - Transition: 150MHz Part Status: Obsolete(EOL) Family Name: KSA1381E Categories: Discrete Semiconductor Products Manufacturer Package: TO-126-3 Current - Collector (Ic) (Maximum): 100mA Voltage - Collector Emitter Breakdown (Maximum): 300V Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 2mA, 20mA Current - Collector Cutoff (Maximum): 100nA (ICBO) DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 10mA, 10V Alternative Parts (Cross-Reference): KSA1381ESTU_NL; KSA1381ES; KSA1381ESTU; Introduction Date: November 14, 2000 ECCN: EAR99 Estimated EOL Date: Obsolete / End of life Halogen Free: Compliant Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance Quantity per package: 60

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 778031-KSA1381ESTSSTU
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-225AA, TO-126-3
Power - Max: 7W
Transistor Type: PNP
Frequency - Transition: 150MHz
Part Status: Obsolete(EOL)
Family Name: KSA1381E
Categories: Discrete Semiconductor Products
Manufacturer Package: TO-126-3
Current - Collector (Ic) (Maximum): 100mA
Voltage - Collector Emitter Breakdown (Maximum): 300V
Vce Saturation (Maximum) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Maximum): 100nA (ICBO)
DC Current Gain (hFE) (Minimum) @ Ic, Vce: 100 @ 10mA, 10V
Alternative Parts (Cross-Reference): KSA1381ESTU_NL; KSA1381ES; KSA1381ESTU;
Introduction Date: November 14, 2000
ECCN: EAR99
Estimated EOL Date: Obsolete / End of life
Halogen Free: Compliant
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance
Quantity per package: 60

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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSA1381ESTSSTU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSA1381ESTSSTU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSA1381ESTSSTU
TRANS PNP 300V 0.1A TO126-3

TRANS PNP 300V 0.1A TO126-3

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number KSA1381ESTSSTU-ND 778031-KSA1381ESTSSTU KSA1381ESTSSTU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSA1381ESTSSTU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP
Package Type TO-225AA, TO-126-3 SOT3
Packing Method Tube; Tube Tube; Tube
IC(max) 1.00E-4 milliamps 100 milliamps
Power Gain 100 dB
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