onsemi Single Bipolar Transistors KSA1013OBU

Description
Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW Through Hole TO-92-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - KSA1013OBU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSA1013OBU-ND
Single Bipolar Transistors KSA1013OBU-ND
Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW Through Hole TO-92-3

Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW Through Hole TO-92-3

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSA1013OBU - 123226-KSA1013OBU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSA1013OBU
123226-KSA1013OBU
TRANSISTORS - Transistors (BJT) - Single - KSA1013OBU 123226-KSA1013OBU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 123226-KSA1013OBU Packaging: Bulk Mounting: Through Hole Frequency - Transition: 50MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 1.5V @ 50mA, 500mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 100 @ 200mA, 5V Maximum Power Dissipation: 900mW Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 6k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 123226-KSA1013OBU
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 50MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 1.5V @ 50mA, 500mA
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 100 @ 200mA, 5V
Maximum Power Dissipation: 900mW
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 6k pcs

Buy Now Datasheet
 - KSA1013OBU - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
 - KSA1013OBU - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSA1013OBU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSA1013OBU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSA1013OBU
TRANS PNP 160V 1A TO92-3

TRANS PNP 160V 1A TO92-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors RF Transistors Bipolar RF Transistors
Product Number KSA1013OBU-ND 123226-KSA1013OBU KSA1013OBU KSA1013OBU
Product Name Single Bipolar Transistors TRANSISTORS - Transistors (BJT) - Single - KSA1013OBU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP; PNP PNP
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