onsemi TRANSISTORS - Transistors (BJT) - Single - KSA1013OBU KSA1013OBU

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 123226-KSA1013OBU
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 50MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 1.5V @ 50mA, 500mA
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 100 @ 200mA, 5V
Maximum Power Dissipation: 900mW
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 6k pcs

PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW Through Hole TO-92-3

PNP BJT Transistor, 160V, 1A, 50MHz, TO-226-3 Product overview: KSA1013OBU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 160V, 1A, 50MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 160V, 1A, 50MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSA1013OBU can be used for catalog matching and distributor lookup.