onsemi Single Bipolar Transistors KSA1013OBU

Description
Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW Through Hole TO-92-3
Request a Quote Datasheet
Description
Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW Through Hole TO-92-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single Bipolar Transistors - KSA1013OBU-ND - DigiKey
Thief River Falls, MN, United States
Single Bipolar Transistors
KSA1013OBU-ND
Single Bipolar Transistors KSA1013OBU-ND
Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW Through Hole TO-92-3

Bipolar (BJT) Transistor PNP 160V 1A 50MHz 900mW Through Hole TO-92-3

Buy Now Datasheet
Singapore, Singapore
160V 1A 50MHz Bipolar Transistor
276-KSA1013OBU
160V 1A 50MHz Bipolar Transistor 276-KSA1013OBU
PNP BJT Transistor, 160V, 1A, 50MHz, TO-226-3 Product overview: KSA1013OBU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 160V, 1A, 50MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 160V, 1A, 50MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSA1013OBU can be used for catalog matching and distributor lookup.

PNP BJT Transistor, 160V, 1A, 50MHz, TO-226-3 Product overview: KSA1013OBU from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 160V, 1A, 50MHz. Search-friendly keywords include transistor, BJT, switching, amplification, 160V, 1A, 50MHz, Bipolar Transistor, Single Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 276-KSA1013OBU can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Single - KSA1013OBU - 123226-KSA1013OBU - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single - KSA1013OBU
123226-KSA1013OBU
TRANSISTORS - Transistors (BJT) - Single - KSA1013OBU 123226-KSA1013OBU
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 123226-KSA1013OBU Packaging: Bulk Mounting: Through Hole Frequency - Transition: 50MHz Transistor Polarity: PNP Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: 150°C (TJ) Case / Package: TO-92-3 Maximum Current Collector: 1A VCEO Maximum Collector-Emitter Breakdown Voltage: 160V Max Vce (sat): 1.5V @ 50mA, 500mA Collector Cut-off Current(Max): 1μA (ICBO) Typical Gain (hFE) (Min): 100 @ 200mA, 5V Maximum Power Dissipation: 900mW Popularity: Medium Fake Threat In the Open Market: 35 pct. Supply and Demand Status: Balance Quantity per package: 6k pcs

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 123226-KSA1013OBU
Packaging: Bulk
Mounting: Through Hole
Frequency - Transition: 50MHz
Transistor Polarity: PNP
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: 150°C (TJ)
Case / Package: TO-92-3
Maximum Current Collector: 1A
VCEO Maximum Collector-Emitter Breakdown Voltage: 160V
Max Vce (sat): 1.5V @ 50mA, 500mA
Collector Cut-off Current(Max): 1μA (ICBO)
Typical Gain (hFE) (Min): 100 @ 200mA, 5V
Maximum Power Dissipation: 900mW
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Balance
Quantity per package: 6k pcs

Buy Now Datasheet
 - KSA1013OBU - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
 - KSA1013OBU - Rochester Electronics
Newburyport, MA, United States
PNP Epitaxial Silicon Transistor

PNP Epitaxial Silicon Transistor

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - KSA1013OBU - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
KSA1013OBU
Discrete Semiconductor Products - Transistors - Bipolar (BJT) KSA1013OBU
TRANS PNP 160V 1A TO92-3

TRANS PNP 160V 1A TO92-3

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Rochester Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors RF Transistors Bipolar RF Transistors
Product Number KSA1013OBU-ND 276-KSA1013OBU 123226-KSA1013OBU KSA1013OBU KSA1013OBU
Product Name Single Bipolar Transistors 160V 1A 50MHz Bipolar Transistor TRANSISTORS - Transistors (BJT) - Single - KSA1013OBU Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity PNP PNP PNP; PNP PNP
Package Type TO-92; TO-226-3, TO-92-3 Long Body TO-92; SOT3; TO-92-3 TO-92; TO-92-3
IC(max) 1000 milliamps 1000 milliamps
VCEO 160 volts 160 volts
VCBO -160 volts
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