The J113 is an N-channel depletion-mode JFET transistor designed for switching and analog applications. It is packaged in a TO-92 (TO-226AA) case with a maximum drain-gate voltage of -35 Vdc and a total device dissipation of 350 mW at 25°C, derating at 2.8 mW/°C above that temperature. The gate-source cutoff voltage ranges from -0.5 V to -3.0 V, with a zero-gate-voltage drain current of 2.0 mA at 15 V drain-source voltage. The static drain-source on-resistance is up to 100 Ω at 0.1 V drain-source voltage. Operating and storage junction temperature ranges from -65°C to +150°C. The device meets no cited industry standards or qualifications in the provided data.
Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Junction FET, TO-92
| Rochester Electronics | |
|---|---|
| Product Category | RF MOSFET Transistors |
| Product Number | J113RL1 |
| Polarity | N-Channel |
