onsemi Bipolar Transistor J111RLRAG

Description
JFET Chopper Transistors, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL Product overview: J111RLRAG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-J111RLRAG can be used for catalog matching and distributor lookup.
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Description
JFET Chopper Transistors, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL Product overview: J111RLRAG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-J111RLRAG can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore
Bipolar Transistor
288-J111RLRAG
Bipolar Transistor 288-J111RLRAG
JFET Chopper Transistors, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL Product overview: J111RLRAG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-J111RLRAG can be used for catalog matching and distributor lookup.

JFET Chopper Transistors, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL Product overview: J111RLRAG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-J111RLRAG can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
JFETs - J111RLRAG-ND - DigiKey
Thief River Falls, MN, United States
JFET N-Channel 35V 350mW Through Hole TO-92 (TO-226)

JFET N-Channel 35V 350mW Through Hole TO-92 (TO-226)

Buy Now Datasheet
JFETs (Junction Field Effect) - J111RLRAG - 070305-J111RLRAG - Win Source Electronics
Laguna Hills, CA, United States
JFETs (Junction Field Effect) - J111RLRAG
070305-J111RLRAG
JFETs (Junction Field Effect) - J111RLRAG 070305-J111RLRAG
Manufacturer: ON Semiconductor Win Source Part Number: 070305-J111RLRAG Packaging: Reel - TR Mounting: Through Hole Polarity: N-Channel Voltage - Breakdown (V(BR)GSS): 35V Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V Voltage - Cutoff (VGS off) @ Id: 3V @ 1μA Resistance - RDS(On): 30 Ohm Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -65°C to 150°C (TJ) Case / Package: TO-92-3 Maximum Power Dissipation: 350mW Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Balance Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial

Manufacturer: ON Semiconductor
Win Source Part Number: 070305-J111RLRAG
Packaging: Reel - TR
Mounting: Through Hole
Polarity: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 1μA
Resistance - RDS(On): 30 Ohm
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Power Dissipation: 350mW
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - JFETs - J111RLRAG - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - JFETs
J111RLRAG
Discrete Semiconductor Products - Transistors - JFETs J111RLRAG
JFET N-CH 35V TO92

JFET N-CH 35V TO92

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors RF Transistors
Product Number 288-J111RLRAG J111RLRAG-ND 070305-J111RLRAG J111RLRAG
Product Name Bipolar Transistor JFETs JFETs (Junction Field Effect) - J111RLRAG Discrete Semiconductor Products - Transistors - JFETs
PD 350 milliwatts
TJ -65 C (-85 F)
Polarity N-Channel N-Channel; N-Channel
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