onsemi JFETs (Junction Field Effect) - J111RLRAG J111RLRAG

Manufacturer: ON Semiconductor
Win Source Part Number: 070305-J111RLRAG
Packaging: Reel - TR
Mounting: Through Hole
Polarity: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 1μA
Resistance - RDS(On): 30 Ohm
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -65°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Power Dissipation: 350mW
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Balance
Application Field: Used in Power Management, Consumer Electronics, Portable Devices, Industrial

JFET N-Channel 35V 350mW Through Hole TO-92 (TO-226)

JFET Chopper Transistors, TO-92 (TO-226) 5.33mm Body Height, 2000-REEL Product overview: J111RLRAG from onsemi is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include transistor, BJT, switching, amplification, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-J111RLRAG can be used for catalog matching and distributor lookup.