onsemi JFETs (Junction Field Effect) - J111_D26Z J111_D26Z

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1049999-J111_D26Z
Packaging: Reel - TR
Mounting: Through Hole
Polarity: N-Channel
Voltage - Breakdown (V(BR)GSS): 35V
Current - Drain (Idss) @ Vds (Vgs=0): 20mA @ 15V
Voltage - Cutoff (VGS off) @ Id: 3V @ 1μA
Resistance - RDS(On): 30 Ohm
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-92-3
Maximum Power Dissipation: 625mW
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

JFET N-CH 35V 625MW TO92 Product overview: J111_D26Z from ON Semiconductor is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 35V, 625MW. Search-friendly keywords include transistor, BJT, switching, amplification, 35V, 625MW, Bipolar Transistor, JFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 288-J111_D26Z can be used for catalog matching and distributor lookup.