onsemi ISL9V3040D3ST-R4940

Description
Insulated Gate Bipolar Transistor, 21A, 450V, N-Channel
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Description
Insulated Gate Bipolar Transistor, 21A, 450V, N-Channel
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Datasheet
Datasheet Summary
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The ISL9V3040x3ST-F085C is a 400 V, N-channel ignition IGBT designed for automotive ignition coil driver circuits. It is available in DPAK, D2PAK, and TO-220 packages with a maximum continuous collector current of 21 A at 25 °C and a power dissipation of 150 W. The device has a self-clamped inductive switching energy of 300 mJ at 25 °C and 170 mJ at 150 °C, with a collector-to-emitter breakdown voltage of 400 V. It features logic-level gate drive and is AEC-Q101 qualified and RoHS compliant.

Datasheet Summary
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The ISL9V3040x3ST-F085C is a 400 V, N-channel ignition IGBT designed for automotive ignition coil driver circuits. It is available in DPAK, D2PAK, and TO-220 packages with a maximum continuous collector current of 21 A at 25 °C and a power dissipation of 150 W. The device has a self-clamped inductive switching energy of 300 mJ at 25 °C and 170 mJ at 150 °C, with a collector-to-emitter breakdown voltage of 400 V. It features logic-level gate drive and is AEC-Q101 qualified and RoHS compliant.

Suppliers

Company
Product
Description
Supplier Links
 - ISL9V3040D3ST-R4940 - Rochester Electronics
Newburyport, MA, United States
Insulated Gate Bipolar Transistor, 21A, 450V, N-Channel

Insulated Gate Bipolar Transistor, 21A, 450V, N-Channel

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Bipolar RF Transistors
Product Number ISL9V3040D3ST-R4940
Package Type DPAK3
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