onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLW510ATM IRLW510ATM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1047692-IRLW510ATM Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 8nC @ 5V Max Input Capacitance: 235pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 440 mOhm @ 2.8A, 5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1047692-IRLW510ATM Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 8nC @ 5V Max Input Capacitance: 235pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 440 mOhm @ 2.8A, 5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLW510ATM - 1047692-IRLW510ATM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLW510ATM
1047692-IRLW510ATM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLW510ATM 1047692-IRLW510ATM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1047692-IRLW510ATM Packaging: Reel - TR Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 37W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: I2PAK Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 5.6A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 8nC @ 5V Max Input Capacitance: 235pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 440 mOhm @ 2.8A, 5V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1047692-IRLW510ATM
Packaging: Reel - TR
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 37W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: I2PAK
Dimension: TO-262-3 Long Leads, I2Pak, TO-262AA
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 5.6A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 8nC @ 5V
Max Input Capacitance: 235pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 440 mOhm @ 2.8A, 5V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Balance

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1047692-IRLW510ATM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRLW510ATM
Polarity N-Channel; N-Channel
V(BR)DSS 100 volts
PD 3800 to 37000 milliwatts
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