onsemi Single FETs, MOSFETs IRL610A

Description
N-Channel 200V 3.3A (Tc) 33W (Tc) Through Hole TO-220-3
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Description
N-Channel 200V 3.3A (Tc) 33W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IRL610A-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRL610A-ND
Single FETs, MOSFETs IRL610A-ND
N-Channel 200V 3.3A (Tc) 33W (Tc) Through Hole TO-220-3

N-Channel 200V 3.3A (Tc) 33W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL610A - 1047514-IRL610A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL610A
1047514-IRL610A
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL610A 1047514-IRL610A
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1047514-IRL610A Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 33W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220-3 Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 3.3A (Tc) Gate-Source Threshold Voltage: 2V @ 250μA Max Gate Charge: 9nC @ 5V Max Input Capacitance: 240pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.65A, 5V Popularity: Medium Fake Threat In the Open Market: 37 pct. Supply and Demand Status: Sufficient Application Field: Used in Power Management

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1047514-IRL610A
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 33W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220-3
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 3.3A (Tc)
Gate-Source Threshold Voltage: 2V @ 250μA
Max Gate Charge: 9nC @ 5V
Max Input Capacitance: 240pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.65A, 5V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Sufficient
Application Field: Used in Power Management

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRL610A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRL610A
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRL610A
MOSFET N-CH 200V 3.3A TO220-3

MOSFET N-CH 200V 3.3A TO220-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IRL610A-ND 1047514-IRL610A IRL610A
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRL610A Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220-3 TO-220; TO-220-3
V(BR)DSS 200 volts
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