onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFW630BTM_FP001 IRFW630BTM_FP001

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1047228-IRFW630BTM_F P001 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 72W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 720pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 400 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFW630BTM_FP001 - 1047228-IRFW630BTM_FP001 - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFW630BTM_FP001 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1047228-IRFW630BTM_F P001 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 72W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 720pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 400 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFW630BTM_FP001 - 1047228-IRFW630BTM_FP001 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFW630BTM_FP001
1047228-IRFW630BTM_FP001
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFW630BTM_FP001 1047228-IRFW630BTM_FP001
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 1047228-IRFW630BTM_F P001 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.13W (Ta), 72W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Not For New Designs Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 9A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 29nC @ 10V Max Input Capacitance: 720pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 400 mOhm @ 4.5A, 10V Popularity: Medium Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Balance

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 1047228-IRFW630BTM_FP001
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.13W (Ta), 72W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Not For New Designs
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 9A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 29nC @ 10V
Max Input Capacitance: 720pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 400 mOhm @ 4.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFW630BTM_FP001 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFW630BTM_FP001
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFW630BTM_FP001
9A, 200V, 0.4OHM, N-CHANNEL

9A, 200V, 0.4OHM, N-CHANNEL

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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1047228-IRFW630BTM_FP001 IRFW630BTM_FP001
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFW630BTM_FP001 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 200 volts
PD 3130 to 72000 milliwatts
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