onsemi TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFW540ATM IRFW540ATM

Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040764-IRFW540ATM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1710pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 52 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFW540ATM - 040764-IRFW540ATM - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IRFW540ATM-ND - DigiKey
    DigiKey
  • MOSFET N-CH 100V 28A D2PAK - 598-IRFW540ATM - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFW540ATM - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040764-IRFW540ATM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1710pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 52 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFW540ATM - 040764-IRFW540ATM - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFW540ATM
040764-IRFW540ATM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFW540ATM 040764-IRFW540ATM
Manufacturer: Fairchild/ON Semiconductor Win Source Part Number: 040764-IRFW540ATM Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: D2PAK (TO-263AB) Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 28A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 1710pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 52 mOhm @ 14A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Limited

Manufacturer: Fairchild/ON Semiconductor
Win Source Part Number: 040764-IRFW540ATM
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 3.8W (Ta), 107W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: D2PAK (TO-263AB)
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 28A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 1710pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 52 mOhm @ 14A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IRFW540ATM-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IRFW540ATM-ND
Single FETs, MOSFETs IRFW540ATM-ND
N-Channel 100V 28A (Tc) 3.8W (Ta), 107W (Tc) Surface Mount D²PAK (TO-263)

N-Channel 100V 28A (Tc) 3.8W (Ta), 107W (Tc) Surface Mount D²PAK (TO-263)

Buy Now Datasheet
MOSFET N-CH 100V 28A D2PAK - 598-IRFW540ATM - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 100V 28A D2PAK
598-IRFW540ATM
MOSFET N-CH 100V 28A D2PAK 598-IRFW540ATM
MOSFET N-CH 100V 28A D2PAK

MOSFET N-CH 100V 28A D2PAK

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRFW540ATM - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRFW540ATM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRFW540ATM
MOSFET N-CH 100V 28A D2PAK

MOSFET N-CH 100V 28A D2PAK

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 040764-IRFW540ATM IRFW540ATM-ND 598-IRFW540ATM IRFW540ATM
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IRFW540ATM Single FETs, MOSFETs MOSFET N-CH 100V 28A D2PAK Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts
PD 3800 to 107000 milliwatts 3800 milliwatts
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